A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2005-05, Vol.53 (5), p.1672-1681
Hauptverfasser:	Yi-jan Emery Chen, Wei-Min Lance Kuo, Zhenrong Jin, Jongsoo Lee, Tretiakov, Y.V., Cressler, J.D., Laskar, J., Freeman, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier frequencies Circuit properties Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency Germanium silicon alloys Heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Inductors line inductor low power Magnetic devices microstrip line Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Oscillators, resonators, synthetizers Phase noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Silicon germanium silicon-germanium (SiGe) Transmission lines Tuning Voltage Voltage controlled oscillators voltage-controlled oscillator (VCO)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!