Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices
This paper deals with the modeling of the electronic characteristics of semiconductor devices based on Schottky contacts in low-dimensional systems. For the capacitance-voltage characteristics, a quasi-two-dimensional quantum mechanical model is developed and validated. For the current-voltage chara...
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| Veröffentlicht in: | IEEE transactions on electron devices 2005-02, Vol.52 (2), p.170-175 |
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| container_end_page | 175 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 52 |
| creator | Ragi, R. Romero, M.A. Nabet, B. |
| description | This paper deals with the modeling of the electronic characteristics of semiconductor devices based on Schottky contacts in low-dimensional systems. For the capacitance-voltage characteristics, a quasi-two-dimensional quantum mechanical model is developed and validated. For the current-voltage characteristics, a unified model is presented, considering both the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions suggest that for photodetection applications the use of these contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude. |
| doi_str_mv | 10.1109/TED.2004.842718 |
| format | Article |
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For the capacitance-voltage characteristics, a quasi-two-dimensional quantum mechanical model is developed and validated. For the current-voltage characteristics, a unified model is presented, considering both the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions suggest that for photodetection applications the use of these contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.842718</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance-voltage characteristics ; Compound structure devices ; Dark current ; Devices ; Electronics ; Exact sciences and technology ; Interfaces ; Mathematical models ; Quantum mechanics ; Quantum-effect semiconductor devices ; Schottky barriers ; Semiconductor device modeling ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor-metal interfaces ; Thermionic emission</subject><ispartof>IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.170-175</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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For the capacitance-voltage characteristics, a quasi-two-dimensional quantum mechanical model is developed and validated. For the current-voltage characteristics, a unified model is presented, considering both the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions suggest that for photodetection applications the use of these contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude.</description><subject>Applied sciences</subject><subject>Capacitance-voltage characteristics</subject><subject>Compound structure devices</subject><subject>Dark current</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Mathematical models</subject><subject>Quantum mechanics</subject><subject>Quantum-effect semiconductor devices</subject><subject>Schottky barriers</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor-metal interfaces</subject><subject>Thermionic emission</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1vFDEQxS0EEkdCTUFjIUGqvXhsrz9KFBKIFERBqFc-ezbnsLcOtpco_318ukiRKKhGo_m9J715hLwDtgZg9vT6_MuaMybXRnIN5gVZQd_rziqpXpIVY2A6K4x4Td6UcttWJSVfkZvvKeAU5xtat0hxQl9z9G6ifuuy8xVzLDX6QtNIf_ptqvX3A_Vpru1WaJzplO67EHc4l5jmptti06RS8-LrkpEG_Bs9lmPyanRTwbdP84j8uji_PvvWXf34enn2-arzwkDtNIOg-3Hc2D6AMaMTyox-s9HOBq2CMaADesOZtMGhcMCBwUa6XikPympxRE4Ovnc5_Vmw1GEXi8dpcjOmpQzGKi6s5byRn_5LcsMEGLEHP_wD3qYlt6zNTemeCWmhQacHyLfwJeM43OW4c_lhADbs-xlaP8O-n-HQT1N8fLJ1pT18zG72sTzLVA-6F6xx7w9cRMTnszCqN1I8Av0VmeY</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Ragi, R.</creator><creator>Romero, M.A.</creator><creator>Nabet, B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor-metal interfaces</topic><topic>Thermionic emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ragi, R.</creatorcontrib><creatorcontrib>Romero, M.A.</creatorcontrib><creatorcontrib>Nabet, B.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ragi, R.</au><au>Romero, M.A.</au><au>Nabet, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2005-02-01</date><risdate>2005</risdate><volume>52</volume><issue>2</issue><spage>170</spage><epage>175</epage><pages>170-175</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper deals with the modeling of the electronic characteristics of semiconductor devices based on Schottky contacts in low-dimensional systems. For the capacitance-voltage characteristics, a quasi-two-dimensional quantum mechanical model is developed and validated. For the current-voltage characteristics, a unified model is presented, considering both the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions suggest that for photodetection applications the use of these contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2004.842718</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.170-175 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance-voltage characteristics Compound structure devices Dark current Devices Electronics Exact sciences and technology Interfaces Mathematical models Quantum mechanics Quantum-effect semiconductor devices Schottky barriers Semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor-metal interfaces Thermionic emission |
| title | Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices |
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