TRANSFORMATION OF DENSE CONTACT HOLES DURING SiO2 ETCHING

The profile transformation that occurs during SiO2 etching using an ArF positive resist is a serious problem. Authors investigate the characteristic transformation of the dense contact holes. Under the high-selectivity etch condition, the deformation of dense contact holes occurs only in the directi...

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Veröffentlicht in:	Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 6B, pp. 3962-3965. 2003 Part 1. Vol. 42, no. 6B, pp. 3962-3965. 2003, 2003, Vol.42 (6B), p.3962-3965
Hauptverfasser:	Sakamori, S, Fujiwara, N, Miyatake, H, Oikawa, K, Yamanaka, M, Sasaki, T
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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