Thickness dependent integrity of gate oxide on SOI

To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness ( T ox) as a parameter. The TDDB characteristic was degraded with increasing the T...

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Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2003-06, Vol.216 (1), p.329-333
Hauptverfasser:	Tsujiuchi, Mikio, Iwamatsu, Toshiaki, Naruoka, Hideki, Umeda, Hiroshi, Ipposhi, Takashi, Maegawa, Shigeto, Inoue, Yasuo
Format:	Artikel
Sprache:	eng
Schlagworte:	GOI SIMOX SOI TDDB Threading dislocation
Online-Zugang:	Volltext
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