Thickness dependent integrity of gate oxide on SOI

Thickness dependent integrity of gate oxide on SOI

To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness ( T ox) as a parameter. The TDDB characteristic was degraded with increasing the T...

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Veröffentlicht in:Applied surface science 2003-06, Vol.216 (1), p.329-333
Hauptverfasser: Tsujiuchi, Mikio, Iwamatsu, Toshiaki, Naruoka, Hideki, Umeda, Hiroshi, Ipposhi, Takashi, Maegawa, Shigeto, Inoue, Yasuo
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Sprache:eng
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GOI
SIMOX
SOI
TDDB
Threading dislocation
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container_end_page 333
container_issue 1
container_start_page 329
container_title Applied surface science
container_volume 216
creator Tsujiuchi, Mikio
Iwamatsu, Toshiaki
Naruoka, Hideki
Umeda, Hiroshi
Ipposhi, Takashi
Maegawa, Shigeto
Inoue, Yasuo
description To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness ( T ox) as a parameter. The TDDB characteristic was degraded with increasing the T ox of gate oxide for the SOI wafer. The time to 50% failure of breakdown ( T BD) was shorter when T ox was thicker than 7 nm in contrast to the gate oxide for the bulk silicon wafer.
doi_str_mv 10.1016/S0169-4332(03)00419-7
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subjects GOI
SIMOX
SOI
TDDB
Threading dislocation
title Thickness dependent integrity of gate oxide on SOI
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