DC magnetron reactive sputtered InN thin film electrodes as photoanodes in aqueous solution. A study of as prepared and nitrogen annealed electrodes
Thin films of indium nitride, InN, were produced by reactive magnetron DC sputtering. By post treatment in dinitrogen, N 2, in the temperature range 350–500 °C a set of films gradually going from InN to indium oxide, In 2O 3 was obtained (due to dioxygen impurities in the annealing gas). Those films...
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Veröffentlicht in: | Thin solid films 2006-07, Vol.510 (1), p.6-14 |
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Format: | Artikel |
Sprache: | eng |
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