DC magnetron reactive sputtered InN thin film electrodes as photoanodes in aqueous solution. A study of as prepared and nitrogen annealed electrodes

Thin films of indium nitride, InN, were produced by reactive magnetron DC sputtering. By post treatment in dinitrogen, N 2, in the temperature range 350–500 °C a set of films gradually going from InN to indium oxide, In 2O 3 was obtained (due to dioxygen impurities in the annealing gas). Those films...

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Veröffentlicht in:Thin solid films 2006-07, Vol.510 (1), p.6-14
Hauptverfasser: Lindgren, Torbjörn, Torres, Gemma Romualdo, Ederth, Jesper, Karmhag, Richard, Granqvist, Claes-Göran, Lindquist, Sten-Eric
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Sprache:eng
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