Structural properties of MBE grown Cu(In, Ga)S2 layers on Si
The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers were deposited on sulphur-terminated Si at a substrate temperature of typically 820 K. Reflection high-e...
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| Veröffentlicht in: | The Journal of physics and chemistry of solids 2003-09, Vol.64 (9-10), p.1491-1494 |
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| container_issue | 9-10 |
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| container_title | The Journal of physics and chemistry of solids |
| container_volume | 64 |
| creator | METZNER, H HAHN, Th CIESLAK, J EBERHARDT, J MÜLLER, M REISLÖHNER, U KAISER, U CHUVILIN, A KRÄUSSLICH, J WITTHUHN, W |
| description | The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers were deposited on sulphur-terminated Si at a substrate temperature of typically 820 K. Reflection high-energy electron diffraction, Rutherford backscattering, X-ray diffraction, and transmission electron microscopy are employed to gain insight into the structural properties of the epitaxial layers with an emphasis on the interplay of lattice mismatch and cation sublattice ordering. All compounds grow epitaxially on Si(111). The quaternary films show a coexistence of chalcopyrite and metastable CuAu-type cation ordering. Lattice match to Si is found for gallium atomic fractions of x=0.41(2). 11 refs. |
| doi_str_mv | 10.1016/S0022-3697(03)00193-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28013293</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28013293</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-83a664c52da7890f687745fba2e7fef6b6bec41d35f51ca7a4582c8a3ba497d3</originalsourceid><addsrcrecordid>eNpFkEtLw0AUhQdRsFZ_gjAbpQWj88xMwE0ttRYqLtL9cDOdkUia1JkE6b83faCrs_nOvYcPoVtKHimh6VNOCGMJTzM1InxMCM14os_QgGqVJUxKfo4Gf8gluorxixAiaUYH6DlvQ2fbLkCFt6HZutCWLuLG4_eXGf4MzU-Np91oUT_gOYxzhivYudADNc7La3ThoYru5pRDtHqdraZvyfJjvphOlollTLWJ5pCmwkq2BqUz4lOtlJC-AOaUdz4t0sJZQddcekktKBBSM6uBFyAyteZDdH882w_87lxszaaM1lUV1K7pomGaUM4y3oPyCNrQxBicN9tQbiDsDCVmr8ocVJm9B0O4Oagyuu_dnR5AtFD5ALUt439ZUiYEp_wXfsVnVQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28013293</pqid></control><display><type>article</type><title>Structural properties of MBE grown Cu(In, Ga)S2 layers on Si</title><source>Elsevier ScienceDirect Journals</source><creator>METZNER, H ; HAHN, Th ; CIESLAK, J ; EBERHARDT, J ; MÜLLER, M ; REISLÖHNER, U ; KAISER, U ; CHUVILIN, A ; KRÄUSSLICH, J ; WITTHUHN, W</creator><creatorcontrib>METZNER, H ; HAHN, Th ; CIESLAK, J ; EBERHARDT, J ; MÜLLER, M ; REISLÖHNER, U ; KAISER, U ; CHUVILIN, A ; KRÄUSSLICH, J ; WITTHUHN, W</creatorcontrib><description>The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers were deposited on sulphur-terminated Si at a substrate temperature of typically 820 K. Reflection high-energy electron diffraction, Rutherford backscattering, X-ray diffraction, and transmission electron microscopy are employed to gain insight into the structural properties of the epitaxial layers with an emphasis on the interplay of lattice mismatch and cation sublattice ordering. All compounds grow epitaxially on Si(111). The quaternary films show a coexistence of chalcopyrite and metastable CuAu-type cation ordering. Lattice match to Si is found for gallium atomic fractions of x=0.41(2). 11 refs.</description><identifier>ISSN: 0022-3697</identifier><identifier>EISSN: 1879-2553</identifier><identifier>DOI: 10.1016/S0022-3697(03)00193-8</identifier><language>eng</language><publisher>Oxford: Elsevier</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics</subject><ispartof>The Journal of physics and chemistry of solids, 2003-09, Vol.64 (9-10), p.1491-1494</ispartof><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-83a664c52da7890f687745fba2e7fef6b6bec41d35f51ca7a4582c8a3ba497d3</citedby><cites>FETCH-LOGICAL-c227t-83a664c52da7890f687745fba2e7fef6b6bec41d35f51ca7a4582c8a3ba497d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15124431$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>METZNER, H</creatorcontrib><creatorcontrib>HAHN, Th</creatorcontrib><creatorcontrib>CIESLAK, J</creatorcontrib><creatorcontrib>EBERHARDT, J</creatorcontrib><creatorcontrib>MÜLLER, M</creatorcontrib><creatorcontrib>REISLÖHNER, U</creatorcontrib><creatorcontrib>KAISER, U</creatorcontrib><creatorcontrib>CHUVILIN, A</creatorcontrib><creatorcontrib>KRÄUSSLICH, J</creatorcontrib><creatorcontrib>WITTHUHN, W</creatorcontrib><title>Structural properties of MBE grown Cu(In, Ga)S2 layers on Si</title><title>The Journal of physics and chemistry of solids</title><description>The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers were deposited on sulphur-terminated Si at a substrate temperature of typically 820 K. Reflection high-energy electron diffraction, Rutherford backscattering, X-ray diffraction, and transmission electron microscopy are employed to gain insight into the structural properties of the epitaxial layers with an emphasis on the interplay of lattice mismatch and cation sublattice ordering. All compounds grow epitaxially on Si(111). The quaternary films show a coexistence of chalcopyrite and metastable CuAu-type cation ordering. Lattice match to Si is found for gallium atomic fractions of x=0.41(2). 11 refs.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Physics</subject><issn>0022-3697</issn><issn>1879-2553</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLw0AUhQdRsFZ_gjAbpQWj88xMwE0ttRYqLtL9cDOdkUia1JkE6b83faCrs_nOvYcPoVtKHimh6VNOCGMJTzM1InxMCM14os_QgGqVJUxKfo4Gf8gluorxixAiaUYH6DlvQ2fbLkCFt6HZutCWLuLG4_eXGf4MzU-Np91oUT_gOYxzhivYudADNc7La3ThoYru5pRDtHqdraZvyfJjvphOlollTLWJ5pCmwkq2BqUz4lOtlJC-AOaUdz4t0sJZQddcekktKBBSM6uBFyAyteZDdH882w_87lxszaaM1lUV1K7pomGaUM4y3oPyCNrQxBicN9tQbiDsDCVmr8ocVJm9B0O4Oagyuu_dnR5AtFD5ALUt439ZUiYEp_wXfsVnVQ</recordid><startdate>200309</startdate><enddate>200309</enddate><creator>METZNER, H</creator><creator>HAHN, Th</creator><creator>CIESLAK, J</creator><creator>EBERHARDT, J</creator><creator>MÜLLER, M</creator><creator>REISLÖHNER, U</creator><creator>KAISER, U</creator><creator>CHUVILIN, A</creator><creator>KRÄUSSLICH, J</creator><creator>WITTHUHN, W</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200309</creationdate><title>Structural properties of MBE grown Cu(In, Ga)S2 layers on Si</title><author>METZNER, H ; HAHN, Th ; CIESLAK, J ; EBERHARDT, J ; MÜLLER, M ; REISLÖHNER, U ; KAISER, U ; CHUVILIN, A ; KRÄUSSLICH, J ; WITTHUHN, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-83a664c52da7890f687745fba2e7fef6b6bec41d35f51ca7a4582c8a3ba497d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>METZNER, H</creatorcontrib><creatorcontrib>HAHN, Th</creatorcontrib><creatorcontrib>CIESLAK, J</creatorcontrib><creatorcontrib>EBERHARDT, J</creatorcontrib><creatorcontrib>MÜLLER, M</creatorcontrib><creatorcontrib>REISLÖHNER, U</creatorcontrib><creatorcontrib>KAISER, U</creatorcontrib><creatorcontrib>CHUVILIN, A</creatorcontrib><creatorcontrib>KRÄUSSLICH, J</creatorcontrib><creatorcontrib>WITTHUHN, W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>The Journal of physics and chemistry of solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>METZNER, H</au><au>HAHN, Th</au><au>CIESLAK, J</au><au>EBERHARDT, J</au><au>MÜLLER, M</au><au>REISLÖHNER, U</au><au>KAISER, U</au><au>CHUVILIN, A</au><au>KRÄUSSLICH, J</au><au>WITTHUHN, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural properties of MBE grown Cu(In, Ga)S2 layers on Si</atitle><jtitle>The Journal of physics and chemistry of solids</jtitle><date>2003-09</date><risdate>2003</risdate><volume>64</volume><issue>9-10</issue><spage>1491</spage><epage>1494</epage><pages>1491-1494</pages><issn>0022-3697</issn><eissn>1879-2553</eissn><abstract>The epitaxial growth of the quaternary CuIn(1-x)GaxS2 system with 0 less than or equal to x less than or equal to 1 on silicon substrates is investigated. Using molecular beam epitaxy, the layers were deposited on sulphur-terminated Si at a substrate temperature of typically 820 K. Reflection high-energy electron diffraction, Rutherford backscattering, X-ray diffraction, and transmission electron microscopy are employed to gain insight into the structural properties of the epitaxial layers with an emphasis on the interplay of lattice mismatch and cation sublattice ordering. All compounds grow epitaxially on Si(111). The quaternary films show a coexistence of chalcopyrite and metastable CuAu-type cation ordering. Lattice match to Si is found for gallium atomic fractions of x=0.41(2). 11 refs.</abstract><cop>Oxford</cop><pub>Elsevier</pub><doi>10.1016/S0022-3697(03)00193-8</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics |
| title | Structural properties of MBE grown Cu(In, Ga)S2 layers on Si |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T00%3A41%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20properties%20of%20MBE%20grown%20Cu(In,%20Ga)S2%20layers%20on%20Si&rft.jtitle=The%20Journal%20of%20physics%20and%20chemistry%20of%20solids&rft.au=METZNER,%20H&rft.date=2003-09&rft.volume=64&rft.issue=9-10&rft.spage=1491&rft.epage=1494&rft.pages=1491-1494&rft.issn=0022-3697&rft.eissn=1879-2553&rft_id=info:doi/10.1016/S0022-3697(03)00193-8&rft_dat=%3Cproquest_cross%3E28013293%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28013293&rft_id=info:pmid/&rfr_iscdi=true |