Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control

We study the growth of (In,Ga)As on GaAs (3 1 1)A and (3 1 1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3 1 1)A and (3 1 1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset...

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