Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control
We study the growth of (In,Ga)As on GaAs (3 1 1)A and (3 1 1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3 1 1)A and (3 1 1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset...
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| Veröffentlicht in: | Journal of crystal growth 2003-04, Vol.251 (1), p.150-154 |
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| container_title | Journal of crystal growth |
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| creator | Gong, Q. Nötzel, R. Wolter, J.H. |
| description | We study the growth of (In,Ga)As on GaAs (3
1
1)A and (3
1
1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3
1
1)A and (3
1
1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (3
1
1)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties. |
| doi_str_mv | 10.1016/S0022-0248(02)02387-4 |
| format | Article |
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1
1)A and (3
1
1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3
1
1)A and (3
1
1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (3
1
1)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/S0022-0248(02)02387-4</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Growth instability ; A3. Molecular beam epitaxy ; B1. (In,Ga)As ; B1. GaAs ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of crystal growth, 2003-04, Vol.251 (1), p.150-154</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c434t-f3990aabbc7c1cf06cbc8c0f3321f27d7e4e9a8001643c7bb6df204360a8dcbb3</citedby><cites>FETCH-LOGICAL-c434t-f3990aabbc7c1cf06cbc8c0f3321f27d7e4e9a8001643c7bb6df204360a8dcbb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0022-0248(02)02387-4$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14687752$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gong, Q.</creatorcontrib><creatorcontrib>Nötzel, R.</creatorcontrib><creatorcontrib>Wolter, J.H.</creatorcontrib><title>Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control</title><title>Journal of crystal growth</title><description>We study the growth of (In,Ga)As on GaAs (3
1
1)A and (3
1
1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3
1
1)A and (3
1
1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (3
1
1)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties.</description><subject>A1. Growth instability</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. (In,Ga)As</subject><subject>B1. GaAs</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkM9uEzEQhy0EEqHwCEi-gBKJpf6z2XW4oFBBiFSph8LZmp21i5Fjp7a3qLwEr1ynKXDsxSNrvm9G8yPkNWfvOePd6SVjQjRMtGrOxIIJqfqmfUJmXPWyWdbmUzL7hzwnL3L-yVgVOZuRP5clgQvNmNyNCXS-De82sFhnepXir_KDupALDM67cktjoBuorbmknPLFmkIY_34-faDZeNvEdAXB_YbiKh0tLWa391AMtTHRbaj29QShTDs6xkLDhN4cWYyhpOhfkmcWfDavHuoJ-f7l87ezr835xWZ7tj5vsJVtaaxcrRjAMGCPHC3rcECFzEopuBX92JvWrEAdrmwl9sPQjVawVnYM1IjDIE_I2-PcfYrXk8lF71xG4z0EE6esRXWVVKKCyyOIKeacjNX75HaQbjVn-hC_vo9fH7Ktj76PX7fVe_OwADKCtwkCuvxfbjvV98vD_I9HztRrb5xJOqMzAc3oksGix-ge2XQHm_CYTA</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Gong, Q.</creator><creator>Nötzel, R.</creator><creator>Wolter, J.H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control</title><author>Gong, Q. ; Nötzel, R. ; Wolter, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-f3990aabbc7c1cf06cbc8c0f3321f27d7e4e9a8001643c7bb6df204360a8dcbb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>A1. Growth instability</topic><topic>A3. Molecular beam epitaxy</topic><topic>B1. (In,Ga)As</topic><topic>B1. GaAs</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gong, Q.</creatorcontrib><creatorcontrib>Nötzel, R.</creatorcontrib><creatorcontrib>Wolter, J.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gong, Q.</au><au>Nötzel, R.</au><au>Wolter, J.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control</atitle><jtitle>Journal of crystal growth</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>251</volume><issue>1</issue><spage>150</spage><epage>154</epage><pages>150-154</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We study the growth of (In,Ga)As on GaAs (3
1
1)A and (3
1
1)B substrates by molecular-beam epitaxy (MBE). Wire-like structures and a matrix of closely packed cells develops, respectively, on (3
1
1)A and (3
1
1)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (3
1
1)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0022-0248(02)02387-4</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2003-04, Vol.251 (1), p.150-154 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28008382 |
| source | Elsevier ScienceDirect Journals |
| subjects | A1. Growth instability A3. Molecular beam epitaxy B1. (In,Ga)As B1. GaAs Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Strain-driven (In,Ga)As growth instability on GaAs (3 1 1)A and (3 1 1)B: self-organization of template for InAs quantum dot nucleation control |
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