High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications
We report the impact of high work-function (/spl Phi//sub M/) metal gate and high-/spl kappa/ dielectrics on memory properties of NAND-type charge trap Flash (CTF) memory devices. In this paper, theoretical and experimental studies show that high /spl Phi//sub M/ gate and high permittivity (high-/sp...
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| Veröffentlicht in: | IEEE transactions on electron devices 2005-12, Vol.52 (12), p.2654-2659 |
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| container_title | IEEE transactions on electron devices |
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| creator | Jeon, Sanghun Han, Jeong Hee Lee, Jung Hoon Choi, Sangmoo Hwang, Hyunsang Kim, Chungwoo |
| description | We report the impact of high work-function (/spl Phi//sub M/) metal gate and high-/spl kappa/ dielectrics on memory properties of NAND-type charge trap Flash (CTF) memory devices. In this paper, theoretical and experimental studies show that high /spl Phi//sub M/ gate and high permittivity (high-/spl kappa/) dielectrics play a key role in eliminating electron back tunneling though the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed. Though process optimization of high /spl Phi//sub M/ gate and high-/spl kappa/ materials, enhanced CTF device characteristics such as high speed, large memory window, and good reliability characteristics of the CTF devices are obtained. |
| doi_str_mv | 10.1109/TED.2005.859691 |
| format | Article |
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In this paper, theoretical and experimental studies show that high /spl Phi//sub M/ gate and high permittivity (high-/spl kappa/) dielectrics play a key role in eliminating electron back tunneling though the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed. 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Though process optimization of high /spl Phi//sub M/ gate and high-/spl kappa/ materials, enhanced CTF device characteristics such as high speed, large memory window, and good reliability characteristics of the CTF devices are obtained.</description><subject>Aluminum materials/devices</subject><subject>Charge trap Flash (CTF) memory</subject><subject>Dielectric materials</subject><subject>electron back tunneling (ETB)</subject><subject>Electron emission</subject><subject>erase</subject><subject>high</subject><subject>Integrated circuit reliability</subject><subject>metal gate</subject><subject>NAND</subject><subject>Optimization methods</subject><subject>Permittivity</subject><subject>Silicon materials/devices</subject><subject>work function</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotzjtPwzAUhmELgUQpzAwsntjS2okv8YhKoUiVWLpHp85JY5qLsVMQ_x6jMh190qtHh5B7zhacM7PcrZ8XOWNyUUqjDL8gMy6lzowS6pLMGONlZoqyuCY3MX6kqYTIZ2TcuENLv8dwzJrTYCc3DrTHCTp6gAkpDDVtU5Eto-_oEbyHJa0ddmin4GykzRiobSEckE4BPG06iG0S-jH80Bq_nE2I952z8GfHW3LVQBfx7v_Oye5lvVttsu3769vqaZs5ydPTGgRaAYXe7y3nGtNqFJi8BiUkKM5KWyvJuOBcCqlyKDUiE9qgyk0pijl5PLM-jJ8njFPVu2ix62DA8RSrvGRMaalT-HAOHSJWPrgewk-VUFXkpvgFikhltA</recordid><startdate>200512</startdate><enddate>200512</enddate><creator>Jeon, Sanghun</creator><creator>Han, Jeong Hee</creator><creator>Lee, Jung Hoon</creator><creator>Choi, Sangmoo</creator><creator>Hwang, Hyunsang</creator><creator>Kim, Chungwoo</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200512</creationdate><title>High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications</title><author>Jeon, Sanghun ; Han, Jeong Hee ; Lee, Jung Hoon ; Choi, Sangmoo ; Hwang, Hyunsang ; Kim, Chungwoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i517-97a4ec4a37bbc117e4ecf6a92da645a6108cd650141154562a87ee0479e629843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aluminum materials/devices</topic><topic>Charge trap Flash (CTF) memory</topic><topic>Dielectric materials</topic><topic>electron back tunneling (ETB)</topic><topic>Electron emission</topic><topic>erase</topic><topic>high</topic><topic>Integrated circuit reliability</topic><topic>metal gate</topic><topic>NAND</topic><topic>Optimization methods</topic><topic>Permittivity</topic><topic>Silicon materials/devices</topic><topic>work function</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeon, Sanghun</creatorcontrib><creatorcontrib>Han, Jeong Hee</creatorcontrib><creatorcontrib>Lee, Jung Hoon</creatorcontrib><creatorcontrib>Choi, Sangmoo</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><creatorcontrib>Kim, Chungwoo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeon, Sanghun</au><au>Han, Jeong Hee</au><au>Lee, Jung Hoon</au><au>Choi, Sangmoo</au><au>Hwang, Hyunsang</au><au>Kim, Chungwoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2005-12</date><risdate>2005</risdate><volume>52</volume><issue>12</issue><spage>2654</spage><epage>2659</epage><pages>2654-2659</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report the impact of high work-function (/spl Phi//sub M/) metal gate and high-/spl kappa/ dielectrics on memory properties of NAND-type charge trap Flash (CTF) memory devices. In this paper, theoretical and experimental studies show that high /spl Phi//sub M/ gate and high permittivity (high-/spl kappa/) dielectrics play a key role in eliminating electron back tunneling though the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed. Though process optimization of high /spl Phi//sub M/ gate and high-/spl kappa/ materials, enhanced CTF device characteristics such as high speed, large memory window, and good reliability characteristics of the CTF devices are obtained.</abstract><pub>IEEE</pub><doi>10.1109/TED.2005.859691</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum materials/devices Charge trap Flash (CTF) memory Dielectric materials electron back tunneling (ETB) Electron emission erase high Integrated circuit reliability metal gate NAND Optimization methods Permittivity Silicon materials/devices work function |
| title | High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications |
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