A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy
Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect...
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description | Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various re-flowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)6Sn5 phase. However, during aging, the (Cu,Ni)6Sn5 phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)3Sn4 IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed. |
doi_str_mv | 10.1007/s11664-003-0141-z |
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The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various re-flowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)6Sn5 phase. However, during aging, the (Cu,Ni)6Sn5 phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)3Sn4 IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-003-0141-z</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Integrated circuits ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of electronic materials, 2003-06, Vol.32 (6), p.548-557</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jun 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c397t-1d102772373b1aad8fd63e697c22833e55c3843d2a659c6c9be56343d1691e4a3</citedby><cites>FETCH-LOGICAL-c397t-1d102772373b1aad8fd63e697c22833e55c3843d2a659c6c9be56343d1691e4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14868435$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JEON, Young-Doo</creatorcontrib><creatorcontrib>NIELAND, Sabine</creatorcontrib><creatorcontrib>OSTMANN, Andreas</creatorcontrib><creatorcontrib>REICHL, Herbert</creatorcontrib><creatorcontrib>PAIK, Kyung-Wook</creatorcontrib><title>A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy</title><title>Journal of electronic materials</title><description>Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various re-flowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)6Sn5 phase. However, during aging, the (Cu,Ni)6Sn5 phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)3Sn4 IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEON, Young-Doo</creatorcontrib><creatorcontrib>NIELAND, Sabine</creatorcontrib><creatorcontrib>OSTMANN, Andreas</creatorcontrib><creatorcontrib>REICHL, Herbert</creatorcontrib><creatorcontrib>PAIK, Kyung-Wook</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JEON, Young-Doo</au><au>NIELAND, Sabine</au><au>OSTMANN, Andreas</au><au>REICHL, Herbert</au><au>PAIK, Kyung-Wook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy</atitle><jtitle>Journal of electronic materials</jtitle><date>2003-06-01</date><risdate>2003</risdate><volume>32</volume><issue>6</issue><spage>548</spage><epage>557</epage><pages>548-557</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various re-flowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)6Sn5 phase. However, during aging, the (Cu,Ni)6Sn5 phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)3Sn4 IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-003-0141-z</doi><tpages>10</tpages></addata></record> |
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subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy |
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