Accelerated stress testing of a-Si:H pixel circuits for AMOLED displays

Electronics reliability testing is traditionally carried out by accelerating the failure mechanisms using high temperature and high stress, and then predicting the real-life performance with the Arrhenius model. Such methods have also been applied to organic light-emitting diode (OLED) testing to pr...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-12, Vol.52 (12), p.2577-2583
Hauptverfasser:	Sakariya, K., Ng, C.K.M., Servati, P., Nathan, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accelerated testing Accelerated tests active matrix amorphous silicon Applied sciences Circuits degradation Diodes Display Displays Electronics Exact sciences and technology Failure mechanisms Life estimation Mathematical models Optoelectronic devices organic light-emitting diode Pixels Reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stresses thin film transistor Thin film transistors threshold voltage Transistors
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