Spin polarization of phase delay time in a magnetic-electric barrier structure
The spin‐dependent phase delay time of two‐dimensional electrons through a magnetic–electric barrier structure with/without an external electric field has been systematically investigated. The dependence of electron spin polarization on the applied bias, the incident wave vector, the incident electr...
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| Veröffentlicht in: | Physica Status Solidi (b) 2003-11, Vol.240 (1), p.169-175 |
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| container_title | Physica Status Solidi (b) |
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| creator | Xu, H. Z. Liu, Pijun Zhang, Yafei |
| description | The spin‐dependent phase delay time of two‐dimensional electrons through a magnetic–electric barrier structure with/without an external electric field has been systematically investigated. The dependence of electron spin polarization on the applied bias, the incident wave vector, the incident electron energy and the height of the electric barrier has been addressed. It is found that the magnetic–electric barrier structure exhibits significant spin polarization under an external electric field, especially for electrons with small energies, where the spin polarization also displays a considerable wave vector‐dependent feature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssb.200301874 |
| format | Article |
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KGaA, Weinheim)</description><subject>72.25.Dc</subject><subject>73.40.Gk</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in condensed matter</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Spin polarized transport</subject><subject>Spin polarized transport in semiconductors</subject><subject>Tunneling</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkM9v1DAQhS0EEkvhytkXuGXrsePYPtLSX1LVIm0RR2viHbeGbBLsrMry15Nqq5ZbT3N43_dGeox9BLEEIeThWEq7lEIoAdbUr9gCtIRKOQ2v2UIoIypwRr5l70r5KYQwoGDBrlZj6vk4dJjTX5zS0PMh8vEOC_E1dbjjU9oQnxnkG7ztaUqhoo7ClFPgLeacKPMy5W2YtpneszcRu0IfHu8B-356cnN8Xl1en10cf7msgrJNXTUYo2iwlQp0cAqlE8LpOkii9VpHNEGpQBJah9LqNdgQJUSnqWnB2Tk9YJ_3vWMefm-pTH6TSqCuw56GbfHSOFuDgxlc7sGQh1IyRT_mtMG88yD8w2z-YTb_NNssfHpsxhKwixn7kMqzpaXWVrqZc3vuPnW0e6HVf1utjv7_Ue3dVCb68-Ri_uUbo4z2P67OvPkqXW1vjrxV_wA0Xo4k</recordid><startdate>200311</startdate><enddate>200311</enddate><creator>Xu, H. 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| language | eng |
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| subjects | 72.25.Dc 73.40.Gk Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in condensed matter Electronic transport in interface structures Exact sciences and technology Physics Spin polarized transport Spin polarized transport in semiconductors Tunneling |
| title | Spin polarization of phase delay time in a magnetic-electric barrier structure |
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