Stoichiometry, morphology and structure of CdS layers grown on InP(1 0 0) from atomic sulfur beam generated from H2S gas and thermally evaporated Cd using molecular beam epitaxy

Epitaxial growth of cadmium sulfide on InP(100) was carried out using molecular beam epitaxy (MBE). Cd was deposited from an effusion cell while sulfur was supplied from ionized H2S gas using an RF atomic source. Epitaxial growth was achieved at growth temperatures ranging from 150DGC to 300DGC and...

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Veröffentlicht in:	Journal of crystal growth 2003-07, Vol.255 (1-2), p.1-7
Hauptverfasser:	JOO WON CHOI, BHUPATHIRAJU, A, HASAN, M.-A, LANNON, John M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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