Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer

The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh va...

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Veröffentlicht in:	Thin solid films 2006-06, Vol.508 (1), p.235-238
Hauptverfasser:	Burhanudin, Zainal A., Nuryadi, Ratno, Ishikawa, Yasuhiko, Tabe, Michiharu
Format:	Artikel
Sprache:	eng
Schlagworte:	Agglomeration Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Si island Si wire SOI Treatment of materials and its effects on microstructure and properties
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