Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh va...
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| Veröffentlicht in: | Thin solid films 2006-06, Vol.508 (1), p.235-238 |
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| container_title | Thin solid films |
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| creator | Burhanudin, Zainal A. Nuryadi, Ratno Ishikawa, Yasuhiko Tabe, Michiharu |
| description | The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 〈112¯〉 directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. This structural transition from wires to islands is presumably due to the atomic-scale thickness fluctuation in the initial Si layer. |
| doi_str_mv | 10.1016/j.tsf.2005.07.326 |
| format | Article |
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As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 〈112¯〉 directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. 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As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 〈112¯〉 directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. This structural transition from wires to islands is presumably due to the atomic-scale thickness fluctuation in the initial Si layer.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.07.326</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 2006-06, Vol.508 (1), p.235-238 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Agglomeration Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Si island Si wire SOI Treatment of materials and its effects on microstructure and properties |
| title | Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer |
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