Simulation of multiple-gate quantum stub transistor
The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the channel. By using a tight-binding model, we have...
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| Veröffentlicht in: | Microelectronic engineering 2005-08, Vol.81 (2), p.544-552 |
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| container_title | Microelectronic engineering |
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| creator | Santos, Edval J.P. Guerra, Alexandre B. |
| description | The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the channel. By using a tight-binding model, we have shown that the multiple gate configuration can be used to reduce this problem. Besides, stubbed waveguides are known to develop a band structure, we propose that a stubbed wire with spin–orbit coupling (Rashba effect) could be used for spin polarized transport. This is an interesting feature, which can be used for spintronics devices. We also discuss how the Rashba effect is incorporated in our simulation program. |
| doi_str_mv | 10.1016/j.mee.2005.03.059 |
| format | Article |
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| ispartof | Microelectronic engineering, 2005-08, Vol.81 (2), p.544-552 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | Applied sciences Electronics Exact sciences and technology Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Multiple gate Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Stub transistor Transistors |
| title | Simulation of multiple-gate quantum stub transistor |
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