Atomic layer processing for doping of SiGe

Atomic layer processing has been demonstrated for doping of SiGe during Reduced Pressure Chemical Vapour Deposition (RPCVD) in a commercial single wafer reactor. Atomic level control of dose and location has been obtained for B doping using B 2H 6 and for P doping using PH 3. The main idea of atomic...

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Veröffentlicht in:	Thin solid films 2006-06, Vol.508 (1), p.279-283
Hauptverfasser:	Tillack, Bernd, Yamamoto, Yuji, Bolze, Detlef, Heinemann, Bernd, Rücker, Holger, Knoll, Dieter, Murota, Junichi, Mehr, Wolfgang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic layer doping Electronics Epitaxy Exact sciences and technology HBT Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe Transistors
Online-Zugang:	Volltext
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