Organic Thin-Film Transistors on a Plastic Substrate with Anodically Oxidized High-Dielectric-Constant Insulators

Organic thin-film transistors (OTFTs) which use Ta2O5 as the gate insulators were fabricated on plastic substrates. The gate insulators were synthesized by anodizing the gate electrodes fabricated as stacked structures of Al and Ta at RT. The stacked structure suppressed the stress at the interface...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2003-01, Vol.42 (Part 1, No. 1), p.299-304
Hauptverfasser:	Iino, Yoshiki, Inoue, Youji, Fujisaki, Yoshihide, Fujikake, Hideo, Sato, Hiroto, Kawakita, Masahiro, Tokito, Shizuo, Kikuchi, Hiroshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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