Machine Learning-Aided Band Gap Engineering of BaZrS3 Chalcogenide Perovskite

The non-toxic and stable chalcogenide perovskite BaZrS3 fulfills many key optoelectronic properties for a high-efficiency photovoltaic material. It has been shown to possess a direct band gap with a large absorption coefficient and good carrier mobility values. With a reported band gap of 1.7–1.8 eV...

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Veröffentlicht in:ACS applied materials & interfaces 2023-04, Vol.15 (15), p.18962-18972
Hauptverfasser: Sharma, Shyam, Ward, Zachary D., Bhimani, Kevin, Sharma, Mukul, Quinton, Joshua, Rhone, Trevor David, Shi, Su-Fei, Terrones, Humberto, Koratkar, Nikhil
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Sprache:eng
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