Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
Schottky-type solar-blind ultra-violet photodetectors were designed and fabricated by employing an unintentionally doped AlGaN layer, grown on a sapphire substrate by MOCVD. When a low-temperature grown AlGaN interlayer was inserted between the GaN and AlGaN active layers, it was found to play an im...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 4B), p.2349-2351 |
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| container_issue | Part 1, No. 4B |
| container_start_page | 2349 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 42 |
| creator | Jung, Young-Ro Lee, Jae-Hoon Kim, Jung-Kyu Lee, Young-Hyun Lee, Myoung-Bok Lee, Jung-Hee Hahm, Sung-Ho |
| description | Schottky-type solar-blind ultra-violet photodetectors were designed and fabricated by employing an unintentionally doped AlGaN layer, grown on a sapphire substrate by MOCVD. When a low-temperature grown AlGaN interlayer was inserted between the GaN and AlGaN active layers, it was found to play an important role in decreasing the thermal and lattice mismatch-induced crack density in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer then exhibited excellent electrical characteristics and UV sensing behavior. The resulting Pt/AlGaN metal semiconductor photodiode had a dark current of 9 nA at -5 V, cut-off wavelength of 310 nm, and quantum efficiency of 65% at 280 nm, plus the UV/visible extinction ratio was approximately 104 in the band edge, which is one of the highest values recorded for an AlGaN photodetector. 8 refs. |
| doi_str_mv | 10.1143/JJAP.42.2349 |
| format | Article |
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The resulting Pt/AlGaN metal semiconductor photodiode had a dark current of 9 nA at -5 V, cut-off wavelength of 310 nm, and quantum efficiency of 65% at 280 nm, plus the UV/visible extinction ratio was approximately 104 in the band edge, which is one of the highest values recorded for an AlGaN photodetector. 8 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.42.2349</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2349-2351</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-7a89585b39afa424ddec5fe9ecb62c338ba27ef6c85047833d91b4a1289a10c63</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Jung, Young-Ro</creatorcontrib><creatorcontrib>Lee, Jae-Hoon</creatorcontrib><creatorcontrib>Kim, Jung-Kyu</creatorcontrib><creatorcontrib>Lee, Young-Hyun</creatorcontrib><creatorcontrib>Lee, Myoung-Bok</creatorcontrib><creatorcontrib>Lee, Jung-Hee</creatorcontrib><creatorcontrib>Hahm, Sung-Ho</creatorcontrib><title>Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers</title><title>Japanese Journal of Applied Physics</title><description>Schottky-type solar-blind ultra-violet photodetectors were designed and fabricated by employing an unintentionally doped AlGaN layer, grown on a sapphire substrate by MOCVD. 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| title | Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers |
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