Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si( [formula omitted]) and Si( [formula omitted]) surfaces

In situ X-ray photoelectron spectroscopy (XPS) reveals that deposited Co atoms at room temperature react with Si at the growth front to form a thin “CoSi 2-like” layer on both clean and hydrogen passivated Si(0 0 1) and Si(1 1 1) surfaces. Improvement in the silicides crystallinity upon annealing wa...

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Veröffentlicht in:	Surface science 2003-06, Vol.532, p.639-644
Hauptverfasser:	Pan, J.S., Tok, E.S., Huan, C.H.A., Liu, R.S., Chai, J.W., Ong, W.J., Toh, K.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Cobalt Diffusion and migration Silicides X-ray photoelectron spectroscopy
Online-Zugang:	Volltext
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