Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface
(0 0 1)-Oriented GaAs metal–insulator–semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4×6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN x...
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| Veröffentlicht in: | Applied surface science 2003-06, Vol.216 (1), p.275-282 |
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| creator | Anantathanasarn, Sanguan Hasegawa, Hideki |
| description | (0
0
1)-Oriented GaAs metal–insulator–semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4×6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN
x
by direct nitridation, and further depositing a thick SiO
2 layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance–voltage (
C–
V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2×4) surface, which results in strongly pinned MIS interfaces, the novel SiO
2/SiN
x
/Si ICL/GaAs MIS structures formed on “genuine” (4×6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4×10
10
cm
−2
eV
−1 range. |
| doi_str_mv | 10.1016/S0169-4332(03)00383-0 |
| format | Article |
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1)-Oriented GaAs metal–insulator–semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4×6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN
x
by direct nitridation, and further depositing a thick SiO
2 layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance–voltage (
C–
V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2×4) surface, which results in strongly pinned MIS interfaces, the novel SiO
2/SiN
x
/Si ICL/GaAs MIS structures formed on “genuine” (4×6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4×10
10
cm
−2
eV
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0
1)-Oriented GaAs metal–insulator–semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4×6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN
x
by direct nitridation, and further depositing a thick SiO
2 layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance–voltage (
C–
V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2×4) surface, which results in strongly pinned MIS interfaces, the novel SiO
2/SiN
x
/Si ICL/GaAs MIS structures formed on “genuine” (4×6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4×10
10
cm
−2
eV
−1 range.</description><subject>(4 × 6) Surface</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>C– V method</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Fermi level pinning</subject><subject>GaAs</subject><subject>Interface structure and roughness</subject><subject>Materials science</subject><subject>Metal-insulator-semiconductor structures (including semiconductor-to-insulator)</subject><subject>MIS structure</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface passivation</subject><subject>Surface structure and topography</subject><subject>Surface treatments</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkM9qGzEQh0VJIK7TRwjMpcU-bDNarXa1p2JM_kFCAk7PQtaOWpW11pV2E_IkeaC-WNd2aI-5jAbmm9-gj7Ezjl858vJ8NZY6K4TIZyjmiEKJDD-wCVeVyKRUxRGb_ENO2MeUfiHyfJxOWHzwIfjwI3ORCK7MIsHdzQpSHwfbD5ESPPv-J6w8-NBTdMYS2C70sWuhNS8UE7gubqiBLsCsgD-vUM4h0sgcMsbJDAGBzyEN-_1TduxMm-jT2ztl3y8vHpfX2e391c1ycZtZUao-k1bVa5cr5cqKl6qher02KIs1VzZX0lVKSuEatFbxqimaoiKnsChlnteGpBJT9uWQu43d74FSrzc-WWpbE6gbks6rWiiU1QjKA2hjl1Ikp7fRb0x80Rz1zrDeG9Y7fRqF3hsemyn7_HbAJGtaF02wPv1fLmqUtdrlfztwNP72yVPUyXoKlho_iup10_l3Lv0FivmOfQ</recordid><startdate>20030630</startdate><enddate>20030630</enddate><creator>Anantathanasarn, Sanguan</creator><creator>Hasegawa, Hideki</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030630</creationdate><title>Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface</title><author>Anantathanasarn, Sanguan ; Hasegawa, Hideki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-5c89bf288f67168de9bba054b18c285f78553fd0cc817d4d47ef80465229ae583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>(4 × 6) Surface</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>C– V method</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Fermi level pinning</topic><topic>GaAs</topic><topic>Interface structure and roughness</topic><topic>Materials science</topic><topic>Metal-insulator-semiconductor structures (including semiconductor-to-insulator)</topic><topic>MIS structure</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface passivation</topic><topic>Surface structure and topography</topic><topic>Surface treatments</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Anantathanasarn, Sanguan</creatorcontrib><creatorcontrib>Hasegawa, Hideki</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Anantathanasarn, Sanguan</au><au>Hasegawa, Hideki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface</atitle><jtitle>Applied surface science</jtitle><date>2003-06-30</date><risdate>2003</risdate><volume>216</volume><issue>1</issue><spage>275</spage><epage>282</epage><pages>275-282</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>(0
0
1)-Oriented GaAs metal–insulator–semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4×6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN
x
by direct nitridation, and further depositing a thick SiO
2 layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance–voltage (
C–
V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2×4) surface, which results in strongly pinned MIS interfaces, the novel SiO
2/SiN
x
/Si ICL/GaAs MIS structures formed on “genuine” (4×6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4×10
10
cm
−2
eV
−1 range.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0169-4332(03)00383-0</doi><tpages>8</tpages></addata></record> |
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| ispartof | Applied surface science, 2003-06, Vol.216 (1), p.275-282 |
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| subjects | (4 × 6) Surface Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology C– V method Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Fermi level pinning GaAs Interface structure and roughness Materials science Metal-insulator-semiconductor structures (including semiconductor-to-insulator) MIS structure Physics Solid surfaces and solid-solid interfaces Surface passivation Surface structure and topography Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface |
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