Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells
A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applicati...
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| Veröffentlicht in: | Thin solid films 2003-02, Vol.425 (1), p.185-192 |
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| container_title | Thin solid films |
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| creator | Plá, J. Tamasi, M. Rizzoli, R. Losurdo, M. Centurioni, E. Summonte, C. Rubinelli, F. |
| description | A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80–95 nm, depending on the solar cell spectral response, and a thickness tolerance of ±10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the ‘Analysis of Microelectronic and Photonic Structures’ code are reported. |
| doi_str_mv | 10.1016/S0040-6090(02)01143-4 |
| format | Article |
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The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80–95 nm, depending on the solar cell spectral response, and a thickness tolerance of ±10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the ‘Analysis of Microelectronic and Photonic Structures’ code are reported.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(02)01143-4</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Energy ; Exact sciences and technology ; Heterostructures ; Indium tin oxide ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Natural energy ; Photovoltaic conversion ; Physics ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Sputtering</subject><ispartof>Thin solid films, 2003-02, Vol.425 (1), p.185-192</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c506t-cf85036c16c903d36d1f09028cb096f002f495091b5b11df7430d4f1e022d04f3</citedby><cites>FETCH-LOGICAL-c506t-cf85036c16c903d36d1f09028cb096f002f495091b5b11df7430d4f1e022d04f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609002011434$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14560829$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Plá, J.</creatorcontrib><creatorcontrib>Tamasi, M.</creatorcontrib><creatorcontrib>Rizzoli, R.</creatorcontrib><creatorcontrib>Losurdo, M.</creatorcontrib><creatorcontrib>Centurioni, E.</creatorcontrib><creatorcontrib>Summonte, C.</creatorcontrib><creatorcontrib>Rubinelli, F.</creatorcontrib><title>Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells</title><title>Thin solid films</title><description>A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80–95 nm, depending on the solar cell spectral response, and a thickness tolerance of ±10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the ‘Analysis of Microelectronic and Photonic Structures’ code are reported.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Heterostructures</subject><subject>Indium tin oxide</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Sputtering</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqNkM9LwzAUx4MoOKd_gpCLooe6lzRNm5PI8BcMdtg8hyxNMKNratIJ86-37YYeFR55h3y-7z0-CF0SuCNA-GQBwCDhIOAG6C0QwtKEHaERKXKR0Dwlx2j0g5yisxjXAEAoTUdoMW9at3FfqnW-xt7i1-UcV2pnQsTWB6yapnJ6-I3Y1VglCzfR3YPfTWuCX29rPUSjr1TA2lRVPEcnVlXRXBz6GL09PS6nL8ls_vw6fZglOgPeJtoWGaRcE64FpGXKS2K7A2mhVyC4BaCWiQwEWWUrQkqbsxRKZokBSktgNh2j6_3cJviPrYmt3LjYX6Bq47dR0lx0ReBfIGO56MBsD-rgYwzGyia4jQo7SUD2ruXgWvYiJVA5uJasy10dFqioVWWDqrWLv2GWcShoP_9-z5lOy6czQUbtTK1N6YLRrSy9-2PTN1sokW4</recordid><startdate>20030203</startdate><enddate>20030203</enddate><creator>Plá, J.</creator><creator>Tamasi, M.</creator><creator>Rizzoli, R.</creator><creator>Losurdo, M.</creator><creator>Centurioni, E.</creator><creator>Summonte, C.</creator><creator>Rubinelli, F.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7SP</scope><scope>L7M</scope></search><sort><creationdate>20030203</creationdate><title>Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells</title><author>Plá, J. ; Tamasi, M. ; Rizzoli, R. ; Losurdo, M. ; Centurioni, E. ; Summonte, C. ; Rubinelli, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c506t-cf85036c16c903d36d1f09028cb096f002f495091b5b11df7430d4f1e022d04f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Heterostructures</topic><topic>Indium tin oxide</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plá, J.</creatorcontrib><creatorcontrib>Tamasi, M.</creatorcontrib><creatorcontrib>Rizzoli, R.</creatorcontrib><creatorcontrib>Losurdo, M.</creatorcontrib><creatorcontrib>Centurioni, E.</creatorcontrib><creatorcontrib>Summonte, C.</creatorcontrib><creatorcontrib>Rubinelli, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics & Communications Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plá, J.</au><au>Tamasi, M.</au><au>Rizzoli, R.</au><au>Losurdo, M.</au><au>Centurioni, E.</au><au>Summonte, C.</au><au>Rubinelli, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells</atitle><jtitle>Thin solid films</jtitle><date>2003-02-03</date><risdate>2003</risdate><volume>425</volume><issue>1</issue><spage>185</spage><epage>192</epage><pages>185-192</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80–95 nm, depending on the solar cell spectral response, and a thickness tolerance of ±10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the ‘Analysis of Microelectronic and Photonic Structures’ code are reported.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(02)01143-4</doi><tpages>8</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Deposition by sputtering Energy Exact sciences and technology Heterostructures Indium tin oxide Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Photovoltaic conversion Physics Solar cells Solar cells. Photoelectrochemical cells Solar energy Sputtering |
| title | Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells |
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