Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method

We have investigated the growth of 6H-SiC layers by a Vapor Liquid Solid (VLS) method. The VLS process involves the reaction of a SiC seed, a liquid silicon phase and a carbon containing gas. The layers exhibit a good crystal quality with X-ray diffraction rocking curves having a FWHM of 18''. The crucible is shown to partly control the wetting properties of liquid silicon on the SiC seed. The use of a carbon-free crucible allows us to clearly demonstrate a true VLS mechanism. A growth rate of 10 *mm/hr has been obtained and is shown to be partially related to the external temperature gradient.