High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemisp...

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Veröffentlicht in:	Materials letters 2003-04, Vol.57 (13-14), p.1982-1986
Hauptverfasser:	Liao, F., Park, S., Larson, J.M., Zachariah, M.R., Girshick, S.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ceramics Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanomaterials Nanoscale materials and structures: fabrication and characterization Physics Si tetrachlorine precursor Silicon carbide Thermal plasmas Thin films
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