Al2O3 formation on si by catalytic chemical vapor deposition

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit Al2O3 thin films on Si crystals using N2 bubbled tri-methyl aluminum [Al(CH3)3, TMA] and molecular O2 as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 C. The maximum dep...

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Veröffentlicht in:	Thin solid films 2003-04, Vol.430 (1-2), p.161-164
Hauptverfasser:	OGITA, Yoh-Ichiro, IEHARA, Shinshi, TOMITA, Toshiyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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