On the influence of substrate temperature for cubic boron nitride growth
BN-films were deposited on Si(100) substrates with r.f. magnetron sputtering of hBN targets. The chemical and the phase composition were determined with Auger electron spectroscopy sputter depth profiling and with Fourier transform infrared spectroscopy; the film stress was measured with the beam-be...
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| Veröffentlicht in: | Thin solid films 2003-08, Vol.437 (1), p.83-88 |
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| container_title | Thin solid films |
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| creator | Le, Y.K Oechsner, H |
| description | BN-films were deposited on Si(100) substrates with r.f. magnetron sputtering of
hBN targets. The chemical and the phase composition were determined with Auger electron spectroscopy sputter depth profiling and with Fourier transform infrared spectroscopy; the film stress was measured with the beam-bending method. Temperature dependent deposition studies for a constant substrate bias of −200 V revealed that
cBN was formed at substrate temperatures close to room temperature for appropriate values of the N
2-content in the N
2/Ar working gas. The stress is slightly reduced with increasing substrate temperature, and thicker
hBN-sublayers seem to improve the film adherence to the substrate. The commonly observed temperature threshold for
cBN growth is very probably required to establish full BN stoichiometry as a condition for
cBN formation. |
| doi_str_mv | 10.1016/S0040-6090(03)00686-2 |
| format | Article |
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hBN targets. The chemical and the phase composition were determined with Auger electron spectroscopy sputter depth profiling and with Fourier transform infrared spectroscopy; the film stress was measured with the beam-bending method. Temperature dependent deposition studies for a constant substrate bias of −200 V revealed that
cBN was formed at substrate temperatures close to room temperature for appropriate values of the N
2-content in the N
2/Ar working gas. The stress is slightly reduced with increasing substrate temperature, and thicker
hBN-sublayers seem to improve the film adherence to the substrate. The commonly observed temperature threshold for
cBN growth is very probably required to establish full BN stoichiometry as a condition for
cBN formation.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(03)00686-2</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Auger electron spectroscopy ; Boron nitride ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deformation and plasticity (including yield, ductility, and superplasticity) ; Deposition by sputtering ; Exact sciences and technology ; Film composition ; Materials science ; Mechanical and acoustical properties of condensed matter ; Mechanical properties of solids ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Plasma processing and deposition</subject><ispartof>Thin solid films, 2003-08, Vol.437 (1), p.83-88</ispartof><rights>2003 Elsevier Science B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c434t-ba627c3545f4dbd0d1079e0776d926b7d7760a083edc20d8c088bde0851aecff3</citedby><cites>FETCH-LOGICAL-c434t-ba627c3545f4dbd0d1079e0776d926b7d7760a083edc20d8c088bde0851aecff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(03)00686-2$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15576582$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Le, Y.K</creatorcontrib><creatorcontrib>Oechsner, H</creatorcontrib><title>On the influence of substrate temperature for cubic boron nitride growth</title><title>Thin solid films</title><description>BN-films were deposited on Si(100) substrates with r.f. magnetron sputtering of
hBN targets. The chemical and the phase composition were determined with Auger electron spectroscopy sputter depth profiling and with Fourier transform infrared spectroscopy; the film stress was measured with the beam-bending method. Temperature dependent deposition studies for a constant substrate bias of −200 V revealed that
cBN was formed at substrate temperatures close to room temperature for appropriate values of the N
2-content in the N
2/Ar working gas. The stress is slightly reduced with increasing substrate temperature, and thicker
hBN-sublayers seem to improve the film adherence to the substrate. The commonly observed temperature threshold for
cBN growth is very probably required to establish full BN stoichiometry as a condition for
cBN formation.</description><subject>Auger electron spectroscopy</subject><subject>Boron nitride</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deformation and plasticity (including yield, ductility, and superplasticity)</subject><subject>Deposition by sputtering</subject><subject>Exact sciences and technology</subject><subject>Film composition</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical properties of solids</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Plasma processing and deposition</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkE1P3DAQhq2qSN1Cf0IlX1qVQ2BsJ3ZyqqoVXxISB-BsOfYYjLLx1nZA_HuSXUSPPc17eN4ZzUPIdwYnDJg8vQWooZLQwS8QxwCylRX_RFasVV3FlWCfyeoD-UK-5vwEAIxzsSKXNyMtj0jD6IcJR4s0epqnPpdkCtKCmy3OaUpIfUzUTn2wtI8pjnQMJQWH9CHFl_J4RA68GTJ-e5-H5P787G59WV3fXFyt_1xXthZ1qXojubKiqRtfu96BY6A6BKWk67jslZsTGGgFOsvBtRbatncIbcMMWu_FIfm537tN8e-EuehNyBaHwYwYp6y56pioGzmDzR60Keac0OttChuTXjUDvXjTO296kaJB6J03zefej_cDJlsz-GRGG_K_ctMo2bQL93vP4fztc8Cksw2LQRcS2qJdDP-59AbYb4IL</recordid><startdate>20030801</startdate><enddate>20030801</enddate><creator>Le, Y.K</creator><creator>Oechsner, H</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030801</creationdate><title>On the influence of substrate temperature for cubic boron nitride growth</title><author>Le, Y.K ; Oechsner, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-ba627c3545f4dbd0d1079e0776d926b7d7760a083edc20d8c088bde0851aecff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Auger electron spectroscopy</topic><topic>Boron nitride</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deformation and plasticity (including yield, ductility, and superplasticity)</topic><topic>Deposition by sputtering</topic><topic>Exact sciences and technology</topic><topic>Film composition</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Mechanical properties of solids</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Plasma processing and deposition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Le, Y.K</creatorcontrib><creatorcontrib>Oechsner, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Le, Y.K</au><au>Oechsner, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the influence of substrate temperature for cubic boron nitride growth</atitle><jtitle>Thin solid films</jtitle><date>2003-08-01</date><risdate>2003</risdate><volume>437</volume><issue>1</issue><spage>83</spage><epage>88</epage><pages>83-88</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>BN-films were deposited on Si(100) substrates with r.f. magnetron sputtering of
hBN targets. The chemical and the phase composition were determined with Auger electron spectroscopy sputter depth profiling and with Fourier transform infrared spectroscopy; the film stress was measured with the beam-bending method. Temperature dependent deposition studies for a constant substrate bias of −200 V revealed that
cBN was formed at substrate temperatures close to room temperature for appropriate values of the N
2-content in the N
2/Ar working gas. The stress is slightly reduced with increasing substrate temperature, and thicker
hBN-sublayers seem to improve the film adherence to the substrate. The commonly observed temperature threshold for
cBN growth is very probably required to establish full BN stoichiometry as a condition for
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Auger electron spectroscopy Boron nitride Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deformation and plasticity (including yield, ductility, and superplasticity) Deposition by sputtering Exact sciences and technology Film composition Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of solids Methods of deposition of films and coatings film growth and epitaxy Physics Plasma processing and deposition |
| title | On the influence of substrate temperature for cubic boron nitride growth |
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