Electrical and optical characterization of n-type ZnO thin films

N‐type ZnO thin films were successfully grown by sol‐gel dipping coat method on glass substrates at 300–600 °C under air atmosphere. Poly ZnO thin films were obtained at more than 300 °C. Values of full width at half maximum of (0002) peak at the XRD spectra became small with the increasing the subs...

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Veröffentlicht in:	Physica status solidi. C 2003-02 (2), p.626-630
Hauptverfasser:	Yoshino, K., Hata, T., Kakeno, T., Komaki, H., Yoneta, M., Akaki, Y., Ikari, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.55.Ht 73.61.Le 78.40.Fy 79.60.Bm
Online-Zugang:	Volltext
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