Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy

A novel single-source precursor with composition D 2GaN 3 is used to grow GaN films on Si(1 1 1) substrates via AlN buffer layers by gas-source molecular beam epitaxy. The morphological and optical properties of the films are determined as a function of the reaction conditions including deposition t...

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Veröffentlicht in:	Thin solid films 2003-06, Vol.434 (1), p.106-111
Hauptverfasser:	Torrison, Levi, Tolle, John, Tsong, Ignatius S.T., Kouvetakis, John
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology GaN Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanostructures Optical materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Single-source MBE
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