In-Situ Cleaning of 4H-SiC (0001) Surfaces by Using Pulsed Laser Irradiation
The 4H-SiC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOF) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pin...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 7A), p.4241-4244, Article 4241 |
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Format: | Artikel |
Sprache: | eng |
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