In-Situ Cleaning of 4H-SiC (0001) Surfaces by Using Pulsed Laser Irradiation

The 4H-SiC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOF) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pin...

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Veröffentlicht in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 7A), p.4241-4244, Article 4241
Hauptverfasser: Abe, Koji, Eryu, Osamu, Sumitomo, Masakiyo, Kariya, Yusuke, Kato, Mina, Nakashima, Kenshiro
Format: Artikel
Sprache:eng
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