Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

Surface pits in the form of v-shaped defects and resulting surface roughening, previously associated solely with InGaN films, were observed and investigated using atomic force microscopy on GaN films grown at 780°C via metalorganic vapor phase epitaxy on conventionally and pendeo-epitaxially deposit...

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Veröffentlicht in:	Journal of crystal growth 2003-06, Vol.253 (1), p.16-25
Hauptverfasser:	Miraglia, P.Q., Preble, E.A., Roskowski, A.M., Einfeldt, S., Davis, R.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Atomic force microscopy A1. Growth models A1. Line defects A1. Surface defects A3. Metalorganic vapor phase epitaxy B2. Gallium nitride Composition defects and impurities Condensed matter: structure, mechanical and thermal properties Defects and impurities: doping, implantation, distribution, concentration, etc Electron, ion, and scanning probe microscopy Exact sciences and technology Physics Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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