High Mobility Thin Film Transistors with Transparent ZnO Channels

We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfO x buffer layer between ZnO channel and amorphous silicon–nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix l...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2003-04, Vol.42 (4A), p.L347-L349
Hauptverfasser:	Nishii, Junya, Hossain, Faruque M., Takagi, Shingo, Aita, Tetsuya, Saikusa, Koji, Ohmaki, Yuji, Ohkubo, Isao, Kishimoto, Shuya, Ohtomo, Akira, Fukumura, Tomoteru, Matsukura, Fumihiro, Ohno, Yuzo, Koinuma, Hideomi, Ohno, Hideo, Kawasaki, Masashi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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