Growth of crystalline SiC film free of cavities by heating PS/silica sol-gel coatings on Si (111) substrate

Single crystalline 6H-SiC films were prepared by spin-coating silica and polystyrene (PS) sol-gel layers subsequently on Si (111) substrate, and then the sample heated in vacuum (10 −3 Pa) to temperature above 1000 °C. The films were investigated by Fourier transform infrared absorption (FTIR), tran...

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Veröffentlicht in:	Materials letters 2003, Vol.57 (5), p.1179-1183
Hauptverfasser:	Wang, Yuxia, He, Haiping, Cao, Ying, Tang, Honggao
Format:	Artikel
Sprache:	eng
Schlagworte:	Cavity Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics SEM Silicon carbide Sol-gel preparation Thin films
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