InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition
The fabrication, characterization, and exploitation of self-assembled quantum dot heterostructures have attracted much attention not only in basic research, but also due to the promising device applications such as in QD lasers. Discrete emission lines from self-assembled InGaAs quantum dots (QDs) g...
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| Veröffentlicht in: | Nanotechnology 2003-12, Vol.14 (12), p.1259-1261 |
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| container_title | Nanotechnology |
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| creator | Xu, Zhangcheng Leosson, Kristjan Birkedal, Dan Lyssenko, Vadim Hvam, Jørn M Sadowski, Janusz |
| description | The fabrication, characterization, and exploitation of self-assembled quantum dot heterostructures have attracted much attention not only in basic research, but also due to the promising device applications such as in QD lasers. Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states. |
| doi_str_mv | 10.1088/0957-4484/14/12/005 |
| format | Article |
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Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. 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Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotubes</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum wells</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxTAQhoMoeLw8gZtudCHUk0vTJMuDeAPBjS5chTRNsNI2PUmKnJ3v4Av4LD6KT2LK8bJQhGGGYb75mfkBOEDwBEHO51BQlhcFL-YoBZ5DSDfADJES5SXFfBPMvoltsBPCI4QIcYxm4P6qv1CLMJ_S2-tyVH0cu7x28f355at7Mm2bPZhovAvRjzqO3mTW-c7UWbXKwlh1rnetWhmf1WZwoYmN6_fAllVtMPufdRfcnZ_dnl7m1zcXV6eL61wTjmNuhGaUKsOIxZZUBVOYFZSwuqKlsLgUhFRKc8sqS2tRWgY5tboqBeVQGKjJLjha6w7eLUcTouyaoNPJqjduDBIzLjDEIoFkDer0R_DGysE3nfIriaCcbJSTSXIySaIUWCYb09bhp7wKWrXWq1434WeVElJwjBN3vOYaN3xP_xCUQ20TfPIb_u-KD3JUkKE</recordid><startdate>20031201</startdate><enddate>20031201</enddate><creator>Xu, Zhangcheng</creator><creator>Leosson, Kristjan</creator><creator>Birkedal, Dan</creator><creator>Lyssenko, Vadim</creator><creator>Hvam, Jørn M</creator><creator>Sadowski, Janusz</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20031201</creationdate><title>InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition</title><author>Xu, Zhangcheng ; Leosson, Kristjan ; Birkedal, Dan ; Lyssenko, Vadim ; Hvam, Jørn M ; Sadowski, Janusz</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-e9c755ae73f2f3b47a274537db569f26933bac8f7bf5d96f7085fcb695809e0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Materials science</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotubes</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Zhangcheng</creatorcontrib><creatorcontrib>Leosson, Kristjan</creatorcontrib><creatorcontrib>Birkedal, Dan</creatorcontrib><creatorcontrib>Lyssenko, Vadim</creatorcontrib><creatorcontrib>Hvam, Jørn M</creatorcontrib><creatorcontrib>Sadowski, Janusz</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Zhangcheng</au><au>Leosson, Kristjan</au><au>Birkedal, Dan</au><au>Lyssenko, Vadim</au><au>Hvam, Jørn M</au><au>Sadowski, Janusz</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition</atitle><jtitle>Nanotechnology</jtitle><date>2003-12-01</date><risdate>2003</risdate><volume>14</volume><issue>12</issue><spage>1259</spage><epage>1261</epage><pages>1259-1261</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>The fabrication, characterization, and exploitation of self-assembled quantum dot heterostructures have attracted much attention not only in basic research, but also due to the promising device applications such as in QD lasers. Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0957-4484/14/12/005</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Quantum wells |
| title | InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition |
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