Influence of polarization on the properties of GaN based FET structures

Influence of polarization on the properties of GaN based FET structures

GaN is the first highly polar semiconductor used in field effect transistors. Polarization charge dipoles are an essential part contributing to the device performance. Especially at the surface such charges may influence stability and large signal characteristics. Switching transients in output curr...

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Veröffentlicht in:Physica status solidi. C 2003-09 (6), p.1919-1939
Hauptverfasser: Neuburger, M., Daumiller, I., Kunze, M., Seyboth, M., Jenkins, T., Van Nostrand, J., Kohn, E.
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container_end_page 1939
container_issue 6
container_start_page 1919
container_title Physica status solidi. C
container_volume
creator Neuburger, M.
Daumiller, I.
Kunze, M.
Seyboth, M.
Jenkins, T.
Van Nostrand, J.
Kohn, E.
description GaN is the first highly polar semiconductor used in field effect transistors. Polarization charge dipoles are an essential part contributing to the device performance. Especially at the surface such charges may influence stability and large signal characteristics. Switching transients in output current of AlGaN/GaN‐FETs related to charge storage effects are discussed and related to the polar nature of this material system. Alternative structures not suffering of the surface charge problem are introduced, namely an InGaN‐channel FET and a AlGaN/GaN‐double barrier structure. For realization doping screening of the polarization field is applied as main tool. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.200303134
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27876388</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27876388</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3374-311d7d1042ec45b36c1be003f8e3ef20466392d3bd8dc845520e9006e6cc5b643</originalsourceid><addsrcrecordid>eNqFkEFLw0AQRhdRsFavnnPylrq7s9kkRyk2bS1VqNLjstlMMJomcTdB6683JVK8CQMzh_eGj4-Qa0YnjFJ-2zhnJpxSoMBAnJARk4z6TAp-erxBnJML5956KqBMjkiyqPKyw8qgV-deU5faFt-6LerK66d9Ra-xdYO2LdAdiESvvVQ7zLzZ_bPnWtuZtrPoLslZrkuHV797TF56YDr3V4_JYnq38g1AKHxgLAszRgVHI4IUpGEp9mHyCAFzToWUEPMM0izKTCSCgFOMKZUojQlSKWBMboa_fayPDl2rdoUzWJa6wrpziodRKCGKenAygMbWzlnMVWOLnbZ7xag69KUOfaljX70QD8JnUeL-H1o9bTbTv64_uIVr8evoavuuZAhhoLbrRIlwtuXL-EEt4QfUYH1z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27876388</pqid></control><display><type>article</type><title>Influence of polarization on the properties of GaN based FET structures</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Neuburger, M. ; Daumiller, I. ; Kunze, M. ; Seyboth, M. ; Jenkins, T. ; Van Nostrand, J. ; Kohn, E.</creator><creatorcontrib>Neuburger, M. ; Daumiller, I. ; Kunze, M. ; Seyboth, M. ; Jenkins, T. ; Van Nostrand, J. ; Kohn, E.</creatorcontrib><description>GaN is the first highly polar semiconductor used in field effect transistors. Polarization charge dipoles are an essential part contributing to the device performance. Especially at the surface such charges may influence stability and large signal characteristics. Switching transients in output current of AlGaN/GaN‐FETs related to charge storage effects are discussed and related to the polar nature of this material system. Alternative structures not suffering of the surface charge problem are introduced, namely an InGaN‐channel FET and a AlGaN/GaN‐double barrier structure. For realization doping screening of the polarization field is applied as main tool. (© 2003 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 1610-1634</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200303134</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>73.40.Kp ; 77.22.Ej ; 85.30.Tv</subject><ispartof>Physica status solidi. C, 2003-09 (6), p.1919-1939</ispartof><rights>Copyright © 2003 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3374-311d7d1042ec45b36c1be003f8e3ef20466392d3bd8dc845520e9006e6cc5b643</citedby><cites>FETCH-LOGICAL-c3374-311d7d1042ec45b36c1be003f8e3ef20466392d3bd8dc845520e9006e6cc5b643</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.200303134$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200303134$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Neuburger, M.</creatorcontrib><creatorcontrib>Daumiller, I.</creatorcontrib><creatorcontrib>Kunze, M.</creatorcontrib><creatorcontrib>Seyboth, M.</creatorcontrib><creatorcontrib>Jenkins, T.</creatorcontrib><creatorcontrib>Van Nostrand, J.</creatorcontrib><creatorcontrib>Kohn, E.</creatorcontrib><title>Influence of polarization on the properties of GaN based FET structures</title><title>Physica status solidi. C</title><addtitle>phys. stat. sol. (c)</addtitle><description>GaN is the first highly polar semiconductor used in field effect transistors. Polarization charge dipoles are an essential part contributing to the device performance. Especially at the surface such charges may influence stability and large signal characteristics. Switching transients in output current of AlGaN/GaN‐FETs related to charge storage effects are discussed and related to the polar nature of this material system. Alternative structures not suffering of the surface charge problem are introduced, namely an InGaN‐channel FET and a AlGaN/GaN‐double barrier structure. For realization doping screening of the polarization field is applied as main tool. (© 2003 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>73.40.Kp</subject><subject>77.22.Ej</subject><subject>85.30.Tv</subject><issn>1610-1634</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLw0AQRhdRsFavnnPylrq7s9kkRyk2bS1VqNLjstlMMJomcTdB6683JVK8CQMzh_eGj4-Qa0YnjFJ-2zhnJpxSoMBAnJARk4z6TAp-erxBnJML5956KqBMjkiyqPKyw8qgV-deU5faFt-6LerK66d9Ra-xdYO2LdAdiESvvVQ7zLzZ_bPnWtuZtrPoLslZrkuHV797TF56YDr3V4_JYnq38g1AKHxgLAszRgVHI4IUpGEp9mHyCAFzToWUEPMM0izKTCSCgFOMKZUojQlSKWBMboa_fayPDl2rdoUzWJa6wrpziodRKCGKenAygMbWzlnMVWOLnbZ7xag69KUOfaljX70QD8JnUeL-H1o9bTbTv64_uIVr8evoavuuZAhhoLbrRIlwtuXL-EEt4QfUYH1z</recordid><startdate>200309</startdate><enddate>200309</enddate><creator>Neuburger, M.</creator><creator>Daumiller, I.</creator><creator>Kunze, M.</creator><creator>Seyboth, M.</creator><creator>Jenkins, T.</creator><creator>Van Nostrand, J.</creator><creator>Kohn, E.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200309</creationdate><title>Influence of polarization on the properties of GaN based FET structures</title><author>Neuburger, M. ; Daumiller, I. ; Kunze, M. ; Seyboth, M. ; Jenkins, T. ; Van Nostrand, J. ; Kohn, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3374-311d7d1042ec45b36c1be003f8e3ef20466392d3bd8dc845520e9006e6cc5b643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>73.40.Kp</topic><topic>77.22.Ej</topic><topic>85.30.Tv</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Neuburger, M.</creatorcontrib><creatorcontrib>Daumiller, I.</creatorcontrib><creatorcontrib>Kunze, M.</creatorcontrib><creatorcontrib>Seyboth, M.</creatorcontrib><creatorcontrib>Jenkins, T.</creatorcontrib><creatorcontrib>Van Nostrand, J.</creatorcontrib><creatorcontrib>Kohn, E.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Neuburger, M.</au><au>Daumiller, I.</au><au>Kunze, M.</au><au>Seyboth, M.</au><au>Jenkins, T.</au><au>Van Nostrand, J.</au><au>Kohn, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of polarization on the properties of GaN based FET structures</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>phys. stat. sol. (c)</addtitle><date>2003-09</date><risdate>2003</risdate><issue>6</issue><spage>1919</spage><epage>1939</epage><pages>1919-1939</pages><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>GaN is the first highly polar semiconductor used in field effect transistors. Polarization charge dipoles are an essential part contributing to the device performance. Especially at the surface such charges may influence stability and large signal characteristics. Switching transients in output current of AlGaN/GaN‐FETs related to charge storage effects are discussed and related to the polar nature of this material system. Alternative structures not suffering of the surface charge problem are introduced, namely an InGaN‐channel FET and a AlGaN/GaN‐double barrier structure. For realization doping screening of the polarization field is applied as main tool. (© 2003 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200303134</doi><tpages>21</tpages></addata></record>
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subjects 73.40.Kp
77.22.Ej
85.30.Tv
title Influence of polarization on the properties of GaN based FET structures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T12%3A02%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20polarization%20on%20the%20properties%20of%20GaN%20based%20FET%20structures&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Neuburger,%20M.&rft.date=2003-09&rft.issue=6&rft.spage=1919&rft.epage=1939&rft.pages=1919-1939&rft.issn=1610-1634&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.200303134&rft_dat=%3Cproquest_cross%3E27876388%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27876388&rft_id=info:pmid/&rfr_iscdi=true