Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology
Flip-chip interconnection technology plays a key role in today's electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase tra...
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| Veröffentlicht in: | Journal of electronic materials 2003-02, Vol.32 (2), p.89-94 |
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| creator | HUANG, Chien-Sheng DUH, Jenq-Gong CHEN, Yen-Ming WANG, Jyh-Hwa |
| description | Flip-chip interconnection technology plays a key role in today's electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb /Ni/Cu/Ti/Si sub 3 N sub 4 /Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was next to the Ni/Cu UBM. The islandlike (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 was formed between (Ni,Cu) sub 3 Sn sub 4 and solders. The amounts of (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied. |
| doi_str_mv | 10.1007/s11664-003-0241-9 |
| format | Article |
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Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb /Ni/Cu/Ti/Si sub 3 N sub 4 /Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was next to the Ni/Cu UBM. The islandlike (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 was formed between (Ni,Cu) sub 3 Sn sub 4 and solders. The amounts of (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-003-0241-9</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb /Ni/Cu/Ti/Si sub 3 N sub 4 /Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was next to the Ni/Cu UBM. The islandlike (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 was formed between (Ni,Cu) sub 3 Sn sub 4 and solders. The amounts of (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb /Ni/Cu/Ti/Si sub 3 N sub 4 /Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni sub 1-x ,Cu sub x ) sub 3 Sn sub 4 was next to the Ni/Cu UBM. The islandlike (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 was formed between (Ni,Cu) sub 3 Sn sub 4 and solders. The amounts of (Cu sub 1-y ,Ni sub y ) sub 6 Sn sub 5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. 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| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology |
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