Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP

The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizin...

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Veröffentlicht in:	Materials letters 2003-11, Vol.57 (29), p.4601-4604
Hauptverfasser:	Kim, Nam-Hoon, Lim, Jong-Heun, Kim, Sang-Yong, Chang, Eui-Goo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Copper CMP Electronics Exact sciences and technology Hydrogen peroxide Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Microstructure Phosphoric acid Semiconductor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Slurry Stabilizer Tantalum nitride CMP
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