Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP
The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizin...
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| Veröffentlicht in: | Materials letters 2003-11, Vol.57 (29), p.4601-4604 |
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| creator | Kim, Nam-Hoon Lim, Jong-Heun Kim, Sang-Yong Chang, Eui-Goo |
| description | The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H
2O
2) is one of the materials that are commonly used as an oxidizing agent in copper CMP. However, hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H
3PO
4) as an accelerator of the tantalum nitride CMP as well as process a stabilizer of the hydrogen peroxide. We also estimated dispersion stability and zeta potential of the abrasive slurry with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the second step copper CMP slurry or in general stabilization of hydrogen peroxide in abrasive slurry. |
| doi_str_mv | 10.1016/S0167-577X(03)00368-9 |
| format | Article |
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2O
2) is one of the materials that are commonly used as an oxidizing agent in copper CMP. However, hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H
3PO
4) as an accelerator of the tantalum nitride CMP as well as process a stabilizer of the hydrogen peroxide. We also estimated dispersion stability and zeta potential of the abrasive slurry with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the second step copper CMP slurry or in general stabilization of hydrogen peroxide in abrasive slurry.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/S0167-577X(03)00368-9</identifier><identifier>CODEN: MLETDJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Copper CMP ; Electronics ; Exact sciences and technology ; Hydrogen peroxide ; Metallization, contacts, interconnects; device isolation ; Microelectronic fabrication (materials and surfaces technology) ; Microstructure ; Phosphoric acid ; Semiconductor ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Slurry ; Stabilizer ; Tantalum nitride CMP</subject><ispartof>Materials letters, 2003-11, Vol.57 (29), p.4601-4604</ispartof><rights>2003 Elsevier Science B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c486t-6cea91330eac9e2e4a45664afd12888831e378f5357db21b79298c1745c950193</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X03003689$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15123799$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Nam-Hoon</creatorcontrib><creatorcontrib>Lim, Jong-Heun</creatorcontrib><creatorcontrib>Kim, Sang-Yong</creatorcontrib><creatorcontrib>Chang, Eui-Goo</creatorcontrib><title>Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP</title><title>Materials letters</title><description>The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H
2O
2) is one of the materials that are commonly used as an oxidizing agent in copper CMP. However, hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H
3PO
4) as an accelerator of the tantalum nitride CMP as well as process a stabilizer of the hydrogen peroxide. We also estimated dispersion stability and zeta potential of the abrasive slurry with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the second step copper CMP slurry or in general stabilization of hydrogen peroxide in abrasive slurry.</description><subject>Applied sciences</subject><subject>Copper CMP</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hydrogen peroxide</subject><subject>Metallization, contacts, interconnects; device isolation</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Microstructure</subject><subject>Phosphoric acid</subject><subject>Semiconductor</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Slurry</subject><subject>Stabilizer</subject><subject>Tantalum nitride CMP</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAUx4MoOKcfQchF0UM1aZKmOYmM6YSJggreQpa-YKRratIJ-ultt6FHH-S9HH55f_JD6JiSC0pocfnUN5kJKV_PCDsnhBVlpnbQiJaSZVxJtYtGv8g-OkjpnRDCFeEjNJs6B7ZLODjcvoXUn-gtNtZXOHVm4Wv_DRGHBtvQtv3NNBXuTNOZerXEje-irwBP7h8P0Z4zdYKj7Ryjl5vp82SWzR9u7ybX88zysuiywoJRlDECxirIgRsuioIbV9G87ItRYLJ0gglZLXK6kCpXpaWSC6sEoYqN0elmbxvDxwpSp5c-Wahr00BYJZ3LUlKpyh4UG9DGkFIEp9volyZ-aUr04E2vvelBiiZMr73pIeBkG2CSNbWLprE-_T0WNGdSDdzVhoP-t58eok7WQ2Oh8rE3qqvg_0n6ARlngTc</recordid><startdate>20031101</startdate><enddate>20031101</enddate><creator>Kim, Nam-Hoon</creator><creator>Lim, Jong-Heun</creator><creator>Kim, Sang-Yong</creator><creator>Chang, Eui-Goo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20031101</creationdate><title>Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP</title><author>Kim, Nam-Hoon ; Lim, Jong-Heun ; Kim, Sang-Yong ; Chang, Eui-Goo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c486t-6cea91330eac9e2e4a45664afd12888831e378f5357db21b79298c1745c950193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Copper CMP</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hydrogen peroxide</topic><topic>Metallization, contacts, interconnects; device isolation</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Microstructure</topic><topic>Phosphoric acid</topic><topic>Semiconductor</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Slurry</topic><topic>Stabilizer</topic><topic>Tantalum nitride CMP</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Nam-Hoon</creatorcontrib><creatorcontrib>Lim, Jong-Heun</creatorcontrib><creatorcontrib>Kim, Sang-Yong</creatorcontrib><creatorcontrib>Chang, Eui-Goo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Nam-Hoon</au><au>Lim, Jong-Heun</au><au>Kim, Sang-Yong</au><au>Chang, Eui-Goo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP</atitle><jtitle>Materials letters</jtitle><date>2003-11-01</date><risdate>2003</risdate><volume>57</volume><issue>29</issue><spage>4601</spage><epage>4604</epage><pages>4601-4604</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><coden>MLETDJ</coden><abstract>The effects of phosphoric acid addition on slurry for chemical–mechanical planarization (CMP) of copper and tantalum nitride were investigated. It is generally known that the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H
2O
2) is one of the materials that are commonly used as an oxidizing agent in copper CMP. However, hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H
3PO
4) as an accelerator of the tantalum nitride CMP as well as process a stabilizer of the hydrogen peroxide. We also estimated dispersion stability and zeta potential of the abrasive slurry with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the second step copper CMP slurry or in general stabilization of hydrogen peroxide in abrasive slurry.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0167-577X(03)00368-9</doi><tpages>4</tpages></addata></record> |
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| ispartof | Materials letters, 2003-11, Vol.57 (29), p.4601-4604 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Copper CMP Electronics Exact sciences and technology Hydrogen peroxide Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Microstructure Phosphoric acid Semiconductor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Slurry Stabilizer Tantalum nitride CMP |
| title | Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP |
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