Effect of spacer layer thickness on the optical properties of stacked In As/InAlAs quantum wires grown on InP(001)

Stacked structures containing InAs quantum wires (QWRs) have been successfully grown on In0.52Al0.48As/InP(001) by solid-source molecular beam epitaxy (MBE). The influence of the In0.52Al0.48As spacer layer thickness (SLT) on the structural and optical properties has been studied by means of transmi...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-08, Vol.B101 (1-3), p.259-261
Hauptverfasser:	Salem, B, Bremond, G, Hjiri, M, Hassen, F, Maaref, H, Marty, O, Brault, J, Gendry, M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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