Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films

Authors report the influence of intermediate AlN/GaN, AlGaN/GaN or AlN /AlGaN strained multilayer structures on the threading dislocation (TD) density and optical properties of GaN films. A series of GaN films were deposited at 1050 C on (0001) sapphire substrates using intermediate AlN/GaN, AlGaN/G...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 11), p.6823-6826
Hauptverfasser:	Gong, Jyh-Rong, Tseng, Su-Fen, Huang, Cheng-Wei, Tsai, Yu-Li, Liao, Wei-Tsai, Wang, Cheng-Liang, Shi, Bing-Hong, Lin, Tai-Yuan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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