Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

In order to construct a reliable parameter set for the physical modeling of 4H-SiC, we are collecting and examining the physical parameters. The results of mobility measurement are presented and compared with the built-in model in the device simulator. The doping dependence of the electron mobility...

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Veröffentlicht in:	Materials science forum 2003-09, Vol.433-436, p.443-446
Hauptverfasser:	Tanaka, Tomoyuki, Kojima, Kazutoshi, Shinohe, Takashi, Suzuki, Takaya, Watanabe, Takatoshi, Hatakeyama, Tetsuo, Kushibe, Mitsuhiro, Arai, Kazuo, Imai, Seiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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