Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam
We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an ang...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2003, Vol.199 (Complete), p.15-18 |
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| container_issue | Complete |
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| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
| container_volume | 199 |
| creator | Matsui, J. Tsusaka, Y. Yokoyama, K. Takeda, S. Katou, M. Kurihara, H. Watanabe, K. Kagoshima, Y. Kimura, S. |
| description | We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10
−5–10
−6.
By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO
2/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured. |
| doi_str_mv | 10.1016/S0168-583X(02)01406-4 |
| format | Article |
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−5–10
−6.
By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO
2/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.</description><identifier>ISSN: 0168-583X</identifier><identifier>EISSN: 1872-9584</identifier><identifier>DOI: 10.1016/S0168-583X(02)01406-4</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Semiconductor crystal ; Strain ; X-ray microbeam ; X-ray rocking curve</subject><ispartof>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199 (Complete), p.15-18</ispartof><rights>2002 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-743ab9c1cc2c9e8a0b61d79397a3609ff6dde9ec7cb647c323ec5b7906a7bf283</citedby><cites>FETCH-LOGICAL-c338t-743ab9c1cc2c9e8a0b61d79397a3609ff6dde9ec7cb647c323ec5b7906a7bf283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0168-583X(02)01406-4$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,4023,27922,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Matsui, J.</creatorcontrib><creatorcontrib>Tsusaka, Y.</creatorcontrib><creatorcontrib>Yokoyama, K.</creatorcontrib><creatorcontrib>Takeda, S.</creatorcontrib><creatorcontrib>Katou, M.</creatorcontrib><creatorcontrib>Kurihara, H.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Kagoshima, Y.</creatorcontrib><creatorcontrib>Kimura, S.</creatorcontrib><title>Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10
−5–10
−6.
By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO
2/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.</description><subject>Semiconductor crystal</subject><subject>Strain</subject><subject>X-ray microbeam</subject><subject>X-ray rocking curve</subject><issn>0168-583X</issn><issn>1872-9584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkMFO3DAQhi1UJLaUR0DyCbWHtE6cxM4JVQhoJaoeAGlv1mQyASPH3toJ0p54dby7Va8djWYu__wz8zF2XoqvpSjbb_e56KLRcv1ZVF9EWYu2qI_YqtSqKrpG1x_Y6p_khH1M6UXkaGSzYm-_CNISaSI_8zDyyfplJu4CguNpjmA9z5loshj8sOAcIp9gpmjBJQ5-4OQI5xi8RT7Qq0VKvN_yJVn_xIE_26dnt-UbiOAcOb4uImzzGoyhJ5g-seMxG9HZ337KHm-uH65-FHe_b39efb8rUEo9F6qW0HdYIlbYkQbRt-WgOtkpkK3oxrEdBuoIFfZtrVBWkrDpVSdaUP1YaXnKLg6-mxj-LJRmM9mE5Bx4CksyldJNq_fC5iDMB6YUaTSbaCeIW1MKs8Nt9rjNjqURldnjNnWeuzzMUf7i1VI0CS15pMHGzMcMwf7H4R3h7Ir-</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Matsui, J.</creator><creator>Tsusaka, Y.</creator><creator>Yokoyama, K.</creator><creator>Takeda, S.</creator><creator>Katou, M.</creator><creator>Kurihara, H.</creator><creator>Watanabe, K.</creator><creator>Kagoshima, Y.</creator><creator>Kimura, S.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2003</creationdate><title>Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam</title><author>Matsui, J. ; Tsusaka, Y. ; Yokoyama, K. ; Takeda, S. ; Katou, M. ; Kurihara, H. ; Watanabe, K. ; Kagoshima, Y. ; Kimura, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-743ab9c1cc2c9e8a0b61d79397a3609ff6dde9ec7cb647c323ec5b7906a7bf283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Semiconductor crystal</topic><topic>Strain</topic><topic>X-ray microbeam</topic><topic>X-ray rocking curve</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsui, J.</creatorcontrib><creatorcontrib>Tsusaka, Y.</creatorcontrib><creatorcontrib>Yokoyama, K.</creatorcontrib><creatorcontrib>Takeda, S.</creatorcontrib><creatorcontrib>Katou, M.</creatorcontrib><creatorcontrib>Kurihara, H.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Kagoshima, Y.</creatorcontrib><creatorcontrib>Kimura, S.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsui, J.</au><au>Tsusaka, Y.</au><au>Yokoyama, K.</au><au>Takeda, S.</au><au>Katou, M.</au><au>Kurihara, H.</au><au>Watanabe, K.</au><au>Kagoshima, Y.</au><au>Kimura, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam</atitle><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2003</date><risdate>2003</risdate><volume>199</volume><issue>Complete</issue><spage>15</spage><epage>18</epage><pages>15-18</pages><issn>0168-583X</issn><eissn>1872-9584</eissn><abstract>We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10
−5–10
−6.
By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO
2/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0168-583X(02)01406-4</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0168-583X |
| ispartof | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199 (Complete), p.15-18 |
| issn | 0168-583X 1872-9584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27856828 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Semiconductor crystal Strain X-ray microbeam X-ray rocking curve |
| title | Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam |
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