Fabrication of ultra-thin strained silicon on insulator

A bond and etch back technique for the fabrication of 13-nm-thick, strained Si directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained Si layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness...

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Veröffentlicht in:	Journal of electronic materials 2003-09, Vol.32 (9), p.972-975
Hauptverfasser:	DRAKE, T. S, CHLEIRIGH, C. Ni, HOYT, J. L, LEE, M. L, PITERA, A. J, FITZGERALD, E. A, ANTONIADIS, D. A, ANJUM, D. H, LI, J, HULL, R, KLYMKO, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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