Multiwafer gas source MBE development for InGaAsP/InP laser production

We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell cracking efficiency, group-III and -V uniformity, pumping system capacity and pyrometer control of growth temperature. We demonstrate the compatibility...

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Veröffentlicht in:	Journal of crystal growth 2003-04, Vol.251 (1), p.130-134
Hauptverfasser:	Lelarge, F., Sanchez, J.J, Gaborit, F., Gentner, J.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Multiwafer growth A3. Gas source molecular beam epitaxy B2. Semiconducting III–V materials B3. InGaAsP/InP lasers Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Physics
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Beschreibung
Zusammenfassung:	We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell cracking efficiency, group-III and -V uniformity, pumping system capacity and pyrometer control of growth temperature. We demonstrate the compatibility of the accurate and reproducible control of Ga x In 1− x As y P 1− y alloys of GSMBE process with large-scale 1.55 μm telecom laser production. Excellent photoluminescence (PL) wavelength uniformity is obtained in 4×2 in configuration. Standard deviation of PL wavelength is smaller than 0.5 nm over the entire surface of the four wafers. Extension of multiwafer growth to heterostructures lasing at shorter wavelength is also discussed.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)02283-2