Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography
Dislocations in high quality Heat-Exchanger Method (HEM) produced sapphire were analyzed with the white beam large area transmission synchrotron X-ray topography technique. After analysis the dislocations for different Laue spots, i.e. different diffraction vectors, in one recorded film, three kinds...
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| Veröffentlicht in: | Journal of crystal growth 2003-05, Vol.252 (1), p.113-119 |
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| container_end_page | 119 |
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| container_title | Journal of crystal growth |
| container_volume | 252 |
| creator | Chen, W.M. McNally, P.J. Shvyd’ko, Yu.V. Tuomi, T. Danilewsky, A.N. Lerche, M. |
| description | Dislocations in high quality Heat-Exchanger Method (HEM) produced sapphire were analyzed with the white beam large area transmission synchrotron X-ray topography technique. After analysis the dislocations for different Laue spots, i.e. different diffraction vectors, in one recorded film, three kinds of dislocations, i.e. screw, edge and mixed dislocations were identified in the studied HEM sapphire, but most are mixed type, whose Burgers vectors belong to the two groups of
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| doi_str_mv | 10.1016/S0022-0248(03)00884-4 |
| format | Article |
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.</description><subject>A1. Burgers vector</subject><subject>A1. Dislocation</subject><subject>A1. X-ray topography</subject><subject>A2. Heat-exchanger method</subject><subject>B1. Sapphire</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkMFO3DAQhq2KSl0oj1DJFxAcQu3Yie0TQkuBSkg9tEi9WbPeycarbBxs023evtldBMee5jDf_4_mI-QLZ1ec8frrT8bKsmCl1BdMXDKmtSzkBzLjWomimpZHZPaGfCLHKa0Zm4Kczcj61qcuOMg-9BR66MbkE21CpC1CLvCva6FfYaQbzG1Y0lUM254mGIbWR6Rbn1u6bX1GukDY0DT2ro0hx6ntdxFhpDkMYRVhaMfP5GMDXcLT13lCnu6-_Zo_FI8_7r_Pbx4LJ2qdC-XMQgCXoIQz6JjksjJaulpVNfJSmsYsjJSqFrwxeqlNaUCp3TuVYnXlxAk5P_QOMTy_YMp245PDroMew0uypdKymjonsDqALoaUIjZ2iH4DcbSc2Z1Zuzdrd9osE3Zv1sopd_Z6AJKDronQO5_ew7KWJRc77vrA4fTtH4_RJuexd7ic1Llsl8H_59I_hCiNdQ</recordid><startdate>20030501</startdate><enddate>20030501</enddate><creator>Chen, W.M.</creator><creator>McNally, P.J.</creator><creator>Shvyd’ko, Yu.V.</creator><creator>Tuomi, T.</creator><creator>Danilewsky, A.N.</creator><creator>Lerche, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030501</creationdate><title>Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography</title><author>Chen, W.M. ; McNally, P.J. ; Shvyd’ko, Yu.V. ; Tuomi, T. ; Danilewsky, A.N. ; Lerche, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-7c9b3a14a73c9ec04145984c6756e1249f9b9447631f98d8929a77016157065c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>A1. Burgers vector</topic><topic>A1. Dislocation</topic><topic>A1. X-ray topography</topic><topic>A2. Heat-exchanger method</topic><topic>B1. Sapphire</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, W.M.</creatorcontrib><creatorcontrib>McNally, P.J.</creatorcontrib><creatorcontrib>Shvyd’ko, Yu.V.</creatorcontrib><creatorcontrib>Tuomi, T.</creatorcontrib><creatorcontrib>Danilewsky, A.N.</creatorcontrib><creatorcontrib>Lerche, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, W.M.</au><au>McNally, P.J.</au><au>Shvyd’ko, Yu.V.</au><au>Tuomi, T.</au><au>Danilewsky, A.N.</au><au>Lerche, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography</atitle><jtitle>Journal of crystal growth</jtitle><date>2003-05-01</date><risdate>2003</risdate><volume>252</volume><issue>1</issue><spage>113</spage><epage>119</epage><pages>113-119</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Dislocations in high quality Heat-Exchanger Method (HEM) produced sapphire were analyzed with the white beam large area transmission synchrotron X-ray topography technique. After analysis the dislocations for different Laue spots, i.e. different diffraction vectors, in one recorded film, three kinds of dislocations, i.e. screw, edge and mixed dislocations were identified in the studied HEM sapphire, but most are mixed type, whose Burgers vectors belong to the two groups of
〈2
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.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0022-0248(03)00884-4</doi><tpages>7</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Burgers vector A1. Dislocation A1. X-ray topography A2. Heat-exchanger method B1. Sapphire Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Growth from melts zone melting and refining Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Physics Structure of solids and liquids crystallography |
| title | Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography |
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