Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by MBE on Si (111). Authors fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra s...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2003-01, Vol.42 (Part 1, No. 1), p.118-121 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 121 |
|---|---|
| container_issue | Part 1, No. 1 |
| container_start_page | 118 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 42 |
| creator | Duboz, Jean-Yves de l'Isle, Nadia Briere Dua, Lydie Legagneux, Pierre Mosca, Mauro Reverchon, Jean-Luc Damilano, Benjamin Grandjean, Nicolas Semond, Fabrice Massies, Jean Dudek, Richard Poitras, Daniel Cassidy, Tom |
| description | Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by MBE on Si (111). Authors fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing. 17 refs. |
| doi_str_mv | 10.1143/JJAP.42.118 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27841939</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27841939</sourcerecordid><originalsourceid>FETCH-LOGICAL-c512t-b25d9e19ba37ce2c85647483008340604ce191ab603a90303f9f8c5b19143a843</originalsourceid><addsrcrecordid>eNotUE1PAjEUbIwmInryD_TkxSz2a3fbIyCiBNREPTfd0sWa3S22Bd1_bwmeXmbevJeZAeAaoxHGjN4tFuPXESMJ8BMwwJSVGUNFfgoGCBGcMUHIObgI4SvBImd4APTKau-02tvYw6XdfEY4a22MttvAe-vWJsCJCmYNXQfn6hm2pq286hI99-6ng1UPV64xetcoDydGtXC2tVH99oeDN9tY7bpLcFarJpir_zkEHw-z9-ljtnyZP03Hy0znmMSsIvlaGCwqRUttiOZ5wUrGKUKcphSI6bTEqioQVQJRRGtRc51XiWRUcUaH4Ob4d-vd986EKFsbtGma5NftgiQlZ1hQkYS3R2GKHoI3tdx62yrfS4zkoUh5KFIykgCnf7qxZJo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27841939</pqid></control><display><type>article</type><title>Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>Duboz, Jean-Yves ; de l'Isle, Nadia Briere ; Dua, Lydie ; Legagneux, Pierre ; Mosca, Mauro ; Reverchon, Jean-Luc ; Damilano, Benjamin ; Grandjean, Nicolas ; Semond, Fabrice ; Massies, Jean ; Dudek, Richard ; Poitras, Daniel ; Cassidy, Tom</creator><creatorcontrib>Duboz, Jean-Yves ; de l'Isle, Nadia Briere ; Dua, Lydie ; Legagneux, Pierre ; Mosca, Mauro ; Reverchon, Jean-Luc ; Damilano, Benjamin ; Grandjean, Nicolas ; Semond, Fabrice ; Massies, Jean ; Dudek, Richard ; Poitras, Daniel ; Cassidy, Tom</creatorcontrib><description>Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by MBE on Si (111). Authors fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing. 17 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.42.118</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.118-121</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c512t-b25d9e19ba37ce2c85647483008340604ce191ab603a90303f9f8c5b19143a843</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Duboz, Jean-Yves</creatorcontrib><creatorcontrib>de l'Isle, Nadia Briere</creatorcontrib><creatorcontrib>Dua, Lydie</creatorcontrib><creatorcontrib>Legagneux, Pierre</creatorcontrib><creatorcontrib>Mosca, Mauro</creatorcontrib><creatorcontrib>Reverchon, Jean-Luc</creatorcontrib><creatorcontrib>Damilano, Benjamin</creatorcontrib><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Semond, Fabrice</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><creatorcontrib>Dudek, Richard</creatorcontrib><creatorcontrib>Poitras, Daniel</creatorcontrib><creatorcontrib>Cassidy, Tom</creatorcontrib><title>Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon</title><title>Japanese Journal of Applied Physics</title><description>Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by MBE on Si (111). Authors fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing. 17 refs.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotUE1PAjEUbIwmInryD_TkxSz2a3fbIyCiBNREPTfd0sWa3S22Bd1_bwmeXmbevJeZAeAaoxHGjN4tFuPXESMJ8BMwwJSVGUNFfgoGCBGcMUHIObgI4SvBImd4APTKau-02tvYw6XdfEY4a22MttvAe-vWJsCJCmYNXQfn6hm2pq286hI99-6ng1UPV64xetcoDydGtXC2tVH99oeDN9tY7bpLcFarJpir_zkEHw-z9-ljtnyZP03Hy0znmMSsIvlaGCwqRUttiOZ5wUrGKUKcphSI6bTEqioQVQJRRGtRc51XiWRUcUaH4Ob4d-vd986EKFsbtGma5NftgiQlZ1hQkYS3R2GKHoI3tdx62yrfS4zkoUh5KFIykgCnf7qxZJo</recordid><startdate>20030101</startdate><enddate>20030101</enddate><creator>Duboz, Jean-Yves</creator><creator>de l'Isle, Nadia Briere</creator><creator>Dua, Lydie</creator><creator>Legagneux, Pierre</creator><creator>Mosca, Mauro</creator><creator>Reverchon, Jean-Luc</creator><creator>Damilano, Benjamin</creator><creator>Grandjean, Nicolas</creator><creator>Semond, Fabrice</creator><creator>Massies, Jean</creator><creator>Dudek, Richard</creator><creator>Poitras, Daniel</creator><creator>Cassidy, Tom</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20030101</creationdate><title>Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon</title><author>Duboz, Jean-Yves ; de l'Isle, Nadia Briere ; Dua, Lydie ; Legagneux, Pierre ; Mosca, Mauro ; Reverchon, Jean-Luc ; Damilano, Benjamin ; Grandjean, Nicolas ; Semond, Fabrice ; Massies, Jean ; Dudek, Richard ; Poitras, Daniel ; Cassidy, Tom</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c512t-b25d9e19ba37ce2c85647483008340604ce191ab603a90303f9f8c5b19143a843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duboz, Jean-Yves</creatorcontrib><creatorcontrib>de l'Isle, Nadia Briere</creatorcontrib><creatorcontrib>Dua, Lydie</creatorcontrib><creatorcontrib>Legagneux, Pierre</creatorcontrib><creatorcontrib>Mosca, Mauro</creatorcontrib><creatorcontrib>Reverchon, Jean-Luc</creatorcontrib><creatorcontrib>Damilano, Benjamin</creatorcontrib><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Semond, Fabrice</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><creatorcontrib>Dudek, Richard</creatorcontrib><creatorcontrib>Poitras, Daniel</creatorcontrib><creatorcontrib>Cassidy, Tom</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Duboz, Jean-Yves</au><au>de l'Isle, Nadia Briere</au><au>Dua, Lydie</au><au>Legagneux, Pierre</au><au>Mosca, Mauro</au><au>Reverchon, Jean-Luc</au><au>Damilano, Benjamin</au><au>Grandjean, Nicolas</au><au>Semond, Fabrice</au><au>Massies, Jean</au><au>Dudek, Richard</au><au>Poitras, Daniel</au><au>Cassidy, Tom</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2003-01-01</date><risdate>2003</risdate><volume>42</volume><issue>Part 1, No. 1</issue><spage>118</spage><epage>121</epage><pages>118-121</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by MBE on Si (111). Authors fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing. 17 refs.</abstract><doi>10.1143/JJAP.42.118</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.118-121 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27841939 |
| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| title | Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T05%3A44%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Microcavity%20Light%20Emitting%20Diodes%20Based%20on%20GaN%20membranes%20Grown%20by%20Molecular%20Beam%20Epitaxy%20on%20Silicon&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Duboz,%20Jean-Yves&rft.date=2003-01-01&rft.volume=42&rft.issue=Part%201,%20No.%201&rft.spage=118&rft.epage=121&rft.pages=118-121&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.42.118&rft_dat=%3Cproquest_cross%3E27841939%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27841939&rft_id=info:pmid/&rfr_iscdi=true |