Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs

We examine, for the first time, Al0.95Ga0.05AsSb-oxide as the lateral current confining layer for InP-based optoelectronic devices including vertical cavity surface emitting lasers. In this paper, Al0.95Ga0.05AsSb-oxide confined broad area edge emitting lasers were used to study current confinement...

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Veröffentlicht in:	Journal of crystal growth 2003-04, Vol.251 (1-4), p.766-770
Hauptverfasser:	REDDY, M. H. M, BUELL, D. A, ASANO, T, KODA, R, FEEZELL, D, HUNTINGTON, A. S, COLDREN, L. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
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container_end_page	770
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container_title	Journal of crystal growth
container_volume	251
creator	REDDY, M. H. M BUELL, D. A ASANO, T KODA, R FEEZELL, D HUNTINGTON, A. S COLDREN, L. A
description	We examine, for the first time, Al0.95Ga0.05AsSb-oxide as the lateral current confining layer for InP-based optoelectronic devices including vertical cavity surface emitting lasers. In this paper, Al0.95Ga0.05AsSb-oxide confined broad area edge emitting lasers were used to study current confinement and optical loss. Results show that the threshold current density scales effectively down to a confining layer width of 6.5 mm and the differential efficiency remains unchanged down to 4 mm, indicating no aperture induced excess loss. This suggests that thin AlGaAsSb layers, at low oxidation temperatures, may get oxidized homogeneously without leaving metallic-Sb behind.
doi_str_mv	10.1016/S0022-0248(02)02389-8
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source	ScienceDirect Journals (5 years ago - present)
subjects	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
title	Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs
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