Identification of Ga interstitials in GaAlNP
New dilute nitride Ga1−xAlxNyP1−y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S=12 were observed and shown to involve Ga interstitials (denoted as Gai-A and G...
Gespeichert in:
| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.466-469, Article 466 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 469 |
|---|---|
| container_issue | |
| container_start_page | 466 |
| container_title | Physica. B, Condensed matter |
| container_volume | 340-342 |
| creator | Vorona, I.P Thinh, N.Q Buyanova, I.A Chen, W.M Hong, Y.G Tu, C.W |
| description | New dilute nitride Ga1−xAlxNyP1−y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S=12 were observed and shown to involve Ga interstitials (denoted as Gai-A and Gai-B), both exhibiting the characteristic hyperfine (HF) structure from the two Ga isotopes. The HF interaction is shown to be nearly isotropic and rather strong, providing evidence for an A1 symmetry of the electron wave function highly localized at the Ga atom. We tentatively attribute Gai-A and Gai-B to the interstitial sites surrounded by group-III and group-(V and III) atoms, respectively. |
| doi_str_mv | 10.1016/j.physb.2003.09.104 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_swepu</sourceid><recordid>TN_cdi_proquest_miscellaneous_27837423</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452603007518</els_id><sourcerecordid>27837423</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-eda1f23f14cdfb9497ade4ad1654e2d8c800fbb9ca36d774cfa057784e81c1543</originalsourceid><addsrcrecordid>eNqFkDFPwzAQhS0EEqXwC1g6MTXFjp04GRiqAqVSBQzAajn2Ga5Kk2K7oP570hYxMMAtp3t67-n0EXLO6IhRll8uRqu3TahGKaV8RMtOFAekxwrJk5Tx7JD0aJmyRGRpfkxOQljQbphkPTKcWWgiOjQ6YtsMWjeY6gE2EXyIGFHXobs6bVzfP56SI9cJcPa9--T59uZpcpfMH6azyXieGJ6XMQGrmUu5Y8JYV5WilNqC0JblmYDUFqag1FVVaTTPrZTCOE0zKQsBBTMsE7xPhvve8AmrdaVWHpfab1SrUV3jy1i1_lXVuFYi54J39ou9feXb9zWEqJYYDNS1bqBdB5XKgkuRbo18bzS-DcGD-2lmVG1BqoXagVRbkIqWnbj9pvyVMhh3tKLXWP-TvdpnocP1geBVMAiNAYseTFS2xT_zX_AjkDs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27837423</pqid></control><display><type>article</type><title>Identification of Ga interstitials in GaAlNP</title><source>Elsevier ScienceDirect Journals</source><creator>Vorona, I.P ; Thinh, N.Q ; Buyanova, I.A ; Chen, W.M ; Hong, Y.G ; Tu, C.W</creator><creatorcontrib>Vorona, I.P ; Thinh, N.Q ; Buyanova, I.A ; Chen, W.M ; Hong, Y.G ; Tu, C.W</creatorcontrib><description>New dilute nitride Ga1−xAlxNyP1−y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S=12 were observed and shown to involve Ga interstitials (denoted as Gai-A and Gai-B), both exhibiting the characteristic hyperfine (HF) structure from the two Ga isotopes. The HF interaction is shown to be nearly isotropic and rather strong, providing evidence for an A1 symmetry of the electron wave function highly localized at the Ga atom. We tentatively attribute Gai-A and Gai-B to the interstitial sites surrounded by group-III and group-(V and III) atoms, respectively.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2003.09.104</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Condensed matter physics ; Fysik ; Ga interstitial ; GaAlNP ; GaP ; Halvledarfysik ; Kondenserade materiens fysik ; NATURAL SCIENCES ; NATURVETENSKAP ; ODMR ; Physics ; Semiconductor physics ; TECHNOLOGY ; TEKNIKVETENSKAP</subject><ispartof>Physica. B, Condensed matter, 2003-12, Vol.340-342, p.466-469, Article 466</ispartof><rights>2003 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-eda1f23f14cdfb9497ade4ad1654e2d8c800fbb9ca36d774cfa057784e81c1543</citedby><cites>FETCH-LOGICAL-c369t-eda1f23f14cdfb9497ade4ad1654e2d8c800fbb9ca36d774cfa057784e81c1543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0921452603007518$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-46343$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Vorona, I.P</creatorcontrib><creatorcontrib>Thinh, N.Q</creatorcontrib><creatorcontrib>Buyanova, I.A</creatorcontrib><creatorcontrib>Chen, W.M</creatorcontrib><creatorcontrib>Hong, Y.G</creatorcontrib><creatorcontrib>Tu, C.W</creatorcontrib><title>Identification of Ga interstitials in GaAlNP</title><title>Physica. B, Condensed matter</title><description>New dilute nitride Ga1−xAlxNyP1−y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S=12 were observed and shown to involve Ga interstitials (denoted as Gai-A and Gai-B), both exhibiting the characteristic hyperfine (HF) structure from the two Ga isotopes. The HF interaction is shown to be nearly isotropic and rather strong, providing evidence for an A1 symmetry of the electron wave function highly localized at the Ga atom. We tentatively attribute Gai-A and Gai-B to the interstitial sites surrounded by group-III and group-(V and III) atoms, respectively.</description><subject>Condensed matter physics</subject><subject>Fysik</subject><subject>Ga interstitial</subject><subject>GaAlNP</subject><subject>GaP</subject><subject>Halvledarfysik</subject><subject>Kondenserade materiens fysik</subject><subject>NATURAL SCIENCES</subject><subject>NATURVETENSKAP</subject><subject>ODMR</subject><subject>Physics</subject><subject>Semiconductor physics</subject><subject>TECHNOLOGY</subject><subject>TEKNIKVETENSKAP</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkDFPwzAQhS0EEqXwC1g6MTXFjp04GRiqAqVSBQzAajn2Ga5Kk2K7oP570hYxMMAtp3t67-n0EXLO6IhRll8uRqu3TahGKaV8RMtOFAekxwrJk5Tx7JD0aJmyRGRpfkxOQljQbphkPTKcWWgiOjQ6YtsMWjeY6gE2EXyIGFHXobs6bVzfP56SI9cJcPa9--T59uZpcpfMH6azyXieGJ6XMQGrmUu5Y8JYV5WilNqC0JblmYDUFqag1FVVaTTPrZTCOE0zKQsBBTMsE7xPhvve8AmrdaVWHpfab1SrUV3jy1i1_lXVuFYi54J39ou9feXb9zWEqJYYDNS1bqBdB5XKgkuRbo18bzS-DcGD-2lmVG1BqoXagVRbkIqWnbj9pvyVMhh3tKLXWP-TvdpnocP1geBVMAiNAYseTFS2xT_zX_AjkDs</recordid><startdate>20031231</startdate><enddate>20031231</enddate><creator>Vorona, I.P</creator><creator>Thinh, N.Q</creator><creator>Buyanova, I.A</creator><creator>Chen, W.M</creator><creator>Hong, Y.G</creator><creator>Tu, C.W</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>DG8</scope></search><sort><creationdate>20031231</creationdate><title>Identification of Ga interstitials in GaAlNP</title><author>Vorona, I.P ; Thinh, N.Q ; Buyanova, I.A ; Chen, W.M ; Hong, Y.G ; Tu, C.W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-eda1f23f14cdfb9497ade4ad1654e2d8c800fbb9ca36d774cfa057784e81c1543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Condensed matter physics</topic><topic>Fysik</topic><topic>Ga interstitial</topic><topic>GaAlNP</topic><topic>GaP</topic><topic>Halvledarfysik</topic><topic>Kondenserade materiens fysik</topic><topic>NATURAL SCIENCES</topic><topic>NATURVETENSKAP</topic><topic>ODMR</topic><topic>Physics</topic><topic>Semiconductor physics</topic><topic>TECHNOLOGY</topic><topic>TEKNIKVETENSKAP</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vorona, I.P</creatorcontrib><creatorcontrib>Thinh, N.Q</creatorcontrib><creatorcontrib>Buyanova, I.A</creatorcontrib><creatorcontrib>Chen, W.M</creatorcontrib><creatorcontrib>Hong, Y.G</creatorcontrib><creatorcontrib>Tu, C.W</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SwePub</collection><collection>SwePub Conference</collection><collection>SWEPUB Linköpings universitet</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vorona, I.P</au><au>Thinh, N.Q</au><au>Buyanova, I.A</au><au>Chen, W.M</au><au>Hong, Y.G</au><au>Tu, C.W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Identification of Ga interstitials in GaAlNP</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2003-12-31</date><risdate>2003</risdate><volume>340-342</volume><spage>466</spage><epage>469</epage><pages>466-469</pages><artnum>466</artnum><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>New dilute nitride Ga1−xAlxNyP1−y alloys grown by gas-source molecular beam epitaxy have been studied by the optical detected magnetic resonance technique. Two paramagnetic defect centers with an effective electron spin S=12 were observed and shown to involve Ga interstitials (denoted as Gai-A and Gai-B), both exhibiting the characteristic hyperfine (HF) structure from the two Ga isotopes. The HF interaction is shown to be nearly isotropic and rather strong, providing evidence for an A1 symmetry of the electron wave function highly localized at the Ga atom. We tentatively attribute Gai-A and Gai-B to the interstitial sites surrounded by group-III and group-(V and III) atoms, respectively.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2003.09.104</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-4526 |
| ispartof | Physica. B, Condensed matter, 2003-12, Vol.340-342, p.466-469, Article 466 |
| issn | 0921-4526 1873-2135 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27837423 |
| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter physics Fysik Ga interstitial GaAlNP GaP Halvledarfysik Kondenserade materiens fysik NATURAL SCIENCES NATURVETENSKAP ODMR Physics Semiconductor physics TECHNOLOGY TEKNIKVETENSKAP |
| title | Identification of Ga interstitials in GaAlNP |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T12%3A50%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_swepu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Identification%20of%20Ga%20interstitials%20in%20GaAlNP&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Vorona,%20I.P&rft.date=2003-12-31&rft.volume=340-342&rft.spage=466&rft.epage=469&rft.pages=466-469&rft.artnum=466&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2003.09.104&rft_dat=%3Cproquest_swepu%3E27837423%3C/proquest_swepu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27837423&rft_id=info:pmid/&rft_els_id=S0921452603007518&rfr_iscdi=true |