Long-pulse duration excimer laser annealing of Al + ion implanted 4H-SiC for pn junction formation

As an alternative to classical thermal heating, laser annealing (LA) was recently demonstrated to be suitable for the electrical activation of ion-implanted dopants in SiC. In this work, we demonstrate the possibility to anneal the Al + ion-implantation induced damage into 4H-SiC by solid phase lase...

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Veröffentlicht in:	Applied surface science 2003-03, Vol.208, p.292-297
Hauptverfasser:	Dutto, C., Fogarassy, E., Mathiot, D., Muller, D., Kern, P., Ballutaud, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping Excimer laser pn junction diodes Silicon carbide Thermal simulation
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description	As an alternative to classical thermal heating, laser annealing (LA) was recently demonstrated to be suitable for the electrical activation of ion-implanted dopants in SiC. In this work, we demonstrate the possibility to anneal the Al + ion-implantation induced damage into 4H-SiC by solid phase laser processing using a XeCl excimer source of 200 ns-pulse duration. The electrical activation of the Al dopant was confirmed by I– V measurements performed directly on mesa pn junction diodes.
doi_str_mv	10.1016/S0169-4332(02)01357-0
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subjects	Doping Excimer laser pn junction diodes Silicon carbide Thermal simulation
title	Long-pulse duration excimer laser annealing of Al + ion implanted 4H-SiC for pn junction formation
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